发明公开
EP2701187A3 Electronic Device including Shallow Trench Isolation (STI) Regions with Bottom Oxide Linear and Upper Nitride Liner and Related Methods
有权
浅严重隔离区域（STI）与下部和上部Oxidabdichtung Nitridabdichtung和相关的方法的电子设备
- 专利标题： Electronic Device including Shallow Trench Isolation (STI) Regions with Bottom Oxide Linear and Upper Nitride Liner and Related Methods
- 专利标题（中）： 浅严重隔离区域（STI）与下部和上部Oxidabdichtung Nitridabdichtung和相关的方法的电子设备
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申请号： EP13179641.9申请日： 2013-08-07
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公开(公告)号： EP2701187A3公开(公告)日： 2014-04-23
- 发明人: Liu, Qing , Loubet, Nicolas , Khare, Prasanna , Ponoth, Shom , Vinet, Maud , Doris, Bruce
- 申请人： STMicroelectronics, Inc. , International Business Machines Corporation , COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 申请人地址： 750 Canyon Drive, Suite 300 Coppell, TX 75019 US
- 专利权人： STMicroelectronics, Inc.,International Business Machines Corporation,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人： STMicroelectronics, Inc.,International Business Machines Corporation,COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- 当前专利权人地址： 750 Canyon Drive, Suite 300 Coppell, TX 75019 US
- 代理机构： Style, Kelda Camilla Karen
- 优先权： US201213590836 20120821
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
An electronic device may include a substrate, a buried oxide (BOX) layer overlying the substrate, at least one semiconductor device overflying the BOX layer, and at least one shallow trench isolation (STI) region in the substrate and adjacent the at least one semiconductor device. The at least one STI region defines a sidewall surface with the substrate and may include an oxide layer lining a bottom portion af the sidewall surface, a nitride layer lining a top portion of the sidewall surface above the bottom portion, and an insulating material within the nitride and oxide layers.
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