发明公开
EP2724197A1 METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY
审中-公开
方法和系统模式的生产中使用承载器射线光刻
- 专利标题： METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY
- 专利标题（中）： 方法和系统模式的生产中使用承载器射线光刻
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申请号： EP12804558.0申请日： 2012-06-19
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公开(公告)号： EP2724197A1公开(公告)日： 2014-04-30
- 发明人: FUJIMURA, Akira , BORK, Ingo
- 申请人： D2S, Inc.
- 申请人地址： 4040 Moorpark Avenue Suite 250 San Jose, CA 95117 US
- 专利权人： D2S, Inc.
- 当前专利权人： D2S, Inc.
- 当前专利权人地址： 4040 Moorpark Avenue Suite 250 San Jose, CA 95117 US
- 代理机构： Williams, Lisa Estelle
- 优先权： US201113168953 20110625
- 国际公布： WO2013003102 20130103
- 主分类号： G03F1/20
- IPC分类号： G03F1/20 ; H01L21/027
摘要：
In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (ß
f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
f expands the process window for the charged particle beam lithography process.
f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
f expands the process window for the charged particle beam lithography process.
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