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    METHOD AND SYSTEM FOR LOGIC DESIGN FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY
    1.
    发明公开
    METHOD AND SYSTEM FOR LOGIC DESIGN FOR CELL PROJECTION PARTICLE BEAM LITHOGRAPHY 审中-公开
    方法和系统逻辑设计粒子射线刻制单元投影

    公开(公告)号：EP2095279A1

    公开(公告)日：2009-09-02

    申请号：EP07871641.2

    申请日：2007-11-29

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  MITSUHASHI, Takashi ,  YOSHIDA, Kenji

    IPC分类号： G06F17/50

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20

    摘要： A method for particle beam lithography, such as electron beam (EB) lithography, includes predefining a stencil design having a plurality of cell patterns with information from a cell library, fabricating the stencil design, synthesizing a functional description into a logic circuit design after predefining the stencil design so that one or more characteristics of the stencil design are considered during synthesizing of the functional description into the logic circuit design, optimizing the logic circuit design, generating a layout design from the optimized logic circuit design, and forming the logic circuit on a substrate according to the stencil design and the layout design.

    METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY
    2.
    发明公开
    METHOD AND SYSTEM FOR FORMING PATTERNS WITH CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
    方法和系统模式的生产中使用承载器射线光刻

    公开(公告)号：EP2724197A1

    公开(公告)日：2014-04-30

    申请号：EP12804558.0

    申请日：2012-06-19

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  BORK, Ingo

    IPC分类号： G03F1/20 ,  H01L21/027

    CPC分类号： G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

    摘要： In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (ß
    f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
    f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
    f expands the process window for the charged particle beam lithography process.

    摘要翻译： 在用于打碎或掩模数据准备或掩模工艺校正带电粒子束光刻的方法，拍摄的多元性是确定性的开采thatwill形式的表面，其中，镜头是确定性的开采，以减少所产生的图案的灵敏度的变化上的图案 波束模糊（测试版F）。 至少在镜头的多元性一些镜头重叠其他射击。 在一些实施方案中，β-f由在镜头的多元性控制拍摄的重叠量减少，要么在初始拍摄的确定，或在后处理步骤。 于βf显示降低的灵敏度扩展用于带电粒子束光刻工艺的工艺窗口。

    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY
    3.
    发明公开
    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING CHARACTER PROJECTION LITHOGRAPHY 审中-公开
    方法光学邻近校正设计及制造字符投影光刻线程CROSS生产资料

    公开(公告)号：EP2321701A2

    公开(公告)日：2011-05-18

    申请号：EP09810440.9

    申请日：2009-08-10

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  GLASSER, Lance ,  MITSUHASHI, Takashi ,  HAGIWARA, Kazuyuki

    IPC分类号： G03F7/20 ,  H01L21/027 ,  G03F1/16

    CPC分类号： G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/68 ,  H01J37/3174

    摘要： A method and system for manufacturing a surface having a multiplicity of slightly different patterns is disclosed. The method comprises using a stencil mask having a set of characters for forming the patterns on the surface and reducing shot count or total write time by use of a character varying technique. Application of such a method to fracturing, mask data preparation, or proximity effect correct is also disclosed. A method for optical proximity correction of a design of a pattern on a surface is also disclosed, comprising inputting desired patterns for the substrate and inputting a set of characters, some of which are complex characters, that may be used to form the pattern on the surface. A method of creating glyphs is also disclosed.

    摘要翻译： 一种用于制造具有大量微小差别图案的多个表面的方法和系统游离缺失盘。 该方法包括使用具有一组字符的表面上形成图案和通过使用字符改变技术的减少拍数或总写入时间模板掩模。 寻求压裂，掩模数据准备，或邻近效应正确gibt游离缺失盘的方法中的应用。 包括输入希望的图形的基板和输入一组字符，其中的一些是复杂字符，也可使用一种用于在表面gibt盘上的图案游离缺失，的设计的光学邻近校正的方法，以在该图案 表面。 创建字形gibt游离缺失盘的方法。

    METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY
    5.
    发明公开
    METHOD AND SYSTEM FOR FORMING PATTERNS USING CHARGED PARTICLE BEAM LITHOGRAPHY 审中-公开
    方法和系统模式的生产中使用承载器射线光刻

    公开(公告)号：EP2681760A2

    公开(公告)日：2014-01-08

    申请号：EP12751849.6

    申请日：2012-02-15

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  ZABLE, Harold Robert

    IPC分类号： H01L21/027 ,  G03F1/36

    CPC分类号： H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31776

    摘要： A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where a plurality of shots in the same exposure pass overlap, and where the dose margin from the set of shots is calculated. A method and system for fracturing or mask data preparation or optical proximity correction or proximity effect correction or mask process correction is disclosed in which a set of shaped beam shots is determined that is capable of forming a pattern on a surface, where the set of shots provides different dosages to different parts of the pattern, and where the dose margin from the set of shots is calculated. A method for forming patterns on a surface is also disclosed.

    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY
    10.
    发明公开
    METHOD FOR OPTICAL PROXIMITY CORRECTION, DESIGN AND MANUFACTURING OF A RETICLE USING VARIABLE SHAPED BEAM LITHOGRAPHY 有权
    方法校正光学邻近效应，设计和分划板制造用不同形状的束光刻

    公开(公告)号：EP2321840A2

    公开(公告)日：2011-05-18

    申请号：EP09810441.7

    申请日：2009-08-10

    申请人： D2S, Inc.

    发明人： FUJIMURA, Akira ,  GLASSER, Lance

    IPC分类号： H01L21/027 ,  G03F7/20

    CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/36 ,  G03F1/68 ,  G03F1/78 ,  H01J37/3174

    摘要： The present invention describes a method for using variable shaped beam (VSB) shots to form a desired pattern on a surface, where the union of the plurality of VSB shots deviates from the desired pattern. Additionally, the VSB shots are allowed to overlap each other, and the dosages of the shots are allowed to vary. Similar methods are disclosed for optical proximity correction (OPC), fracturing, mask data preparation, and proximity effect correction. A method for creating glyphs is also disclosed, in which patterns that would result on a surface from one or a group of VSB shots are pre-calculated. In some embodiments, an optimization technique may be used to minimize shot count. The method of the present disclosure may be used, for example, in the process of manufacturing an integrated circuit by optical lithography using a reticle, or in the process of manufacturing an integrated circuit using direct write.

    摘要翻译： 本发明描述用于使用可变成形波束（VSB）发射，以形成表面，其中，VSB发射的多个联合与期望图案上叉开所希望的图案的方法。 另外，所述VSB发射被允许重叠海誓山盟，和镜头的剂量被允许改变。 类似的方法是光盘为游离缺失光学邻近校正（OPC），压裂，掩模数据准备和邻近效应校正。 一种用于创建图示符gibt游离缺失盘，其中图案做将导致从一个表面或一组VSB发射的上方法是预先计算的。 在一些实施例中，在优化技术可以被用来最小化发射次数。 可以使用掩模版可以使用本公开的方法中，例如，在制造集成电路的过程中通过光学光刻，或者在制造使用直接写入集成电路的过程。