公开(公告)号：EP2724197A1

公开(公告)日：2014-04-30

申请号：EP12804558.0

申请日：2012-06-19

申请人： D2S, Inc.

发明人： FUJIMURA, Akira ,  BORK, Ingo

IPC分类号： G03F1/20 ,  H01L21/027

CPC分类号： G03F7/2037 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  G03F1/78 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31771 ,  H01J2237/31776 ,  H01L21/027 ,  Y10S430/143

摘要： In a method for fracturing or mask data preparation or mask process correction for charged particle beam lithography, a plurality of shots are determined that will form a pattern on a surface, where shots are determined so as to reduce sensitivity of the resulting pattern to changes in beam blur (ß
f ). At least some shots in the plurality of shots overlap other shots. In some embodiments, ß
f is reduced by controlling the amount of shot overlap in the plurality of shots, either during initial shot determination, or in a post-processing step. The reduced sensitivity to ß
f expands the process window for the charged particle beam lithography process.

摘要翻译： 在用于打碎或掩模数据准备或掩模工艺校正带电粒子束光刻的方法，拍摄的多元性是确定性的开采thatwill形式的表面，其中，镜头是确定性的开采，以减少所产生的图案的灵敏度的变化上的图案 波束模糊（测试版F）。 至少在镜头的多元性一些镜头重叠其他射击。 在一些实施方案中，β-f由在镜头的多元性控制拍摄的重叠量减少，要么在初始拍摄的确定，或在后处理步骤。 于βf显示降低的灵敏度扩展用于带电粒子束光刻工艺的工艺窗口。