Described herein are alkoxysilylamine precursors having the following Formulae A and B:

wherein R 1 and R 4 are independently selected from a linear or branched C 1 to C 10 alkyl group, a C 3 to C 12 alkenyl group, a C 3 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl group, and a C 6 to C 10 aryl group and wherein R 2 , R 3 , R 4 , R 5 , and R 6 are independently selected from the group consisting of hydrogen, a linear or branched C 1 to C 10 alkyl group, a C 2 to C 12 alkenyl group, a C 2 to C 12 alkynyl group, a C 4 to C 10 cyclic alkyl, a C 6 to C 10 aryl group, and a linear or branched C 1 to C 10 alkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.