发明公开
- 专利标题： Ga2O3 SEMICONDUCTOR ELEMENT
- 专利标题（中）： Ga2O3系HALBLEITERLEMENT
-
申请号： EP12829607.6申请日： 2012-09-07
-
公开(公告)号： EP2765612A1公开(公告)日： 2014-08-13
- 发明人: SASAKI, Kohei , HIGASHIWAKI, Masataka
- 申请人： Tamura Corporation , National Institute of Information and Communication Technology
- 申请人地址： 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 JP
- 专利权人： Tamura Corporation,National Institute of Information and Communication Technology
- 当前专利权人： Tamura Corporation,National Institute of Information and Communication Technology
- 当前专利权人地址： 1-19-43 Higashi-Oizumi Nerima-ku Tokyo 178-8511 JP
- 代理机构： TBK
- 优先权： JP2011196435 20110908
- 国际公布： WO2013035842 20130314
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L21/20 ; H01L21/336 ; H01L21/338 ; H01L29/26 ; H01L29/812
摘要：
Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MISFET (20), which includes: an n-type β-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance β-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (22) and a drain electrode (23), which are formed on the n-type β-Ga 2 O 3 single crystal film (3); and a gate electrode (21), which is formed on the n-type β-Ga 2 O 3 single crystal film (3) between the source electrode (22) and the drain electrode (23).
公开/授权文献
- EP2765612B1 Ga2O3 SEMICONDUCTOR ELEMENT 公开/授权日：2021-10-27
信息查询
IPC分类:
