A p + collector layer is provided in a surface layer of a rear surface of a semiconductor substrate which will be an n- drift layer and an n + field stop layer is provided in a region which is deeper than the p + collector layer formed on the rear surface. A collector electrode comes into contact with the p + collector layer. When the p + collector layer and the n + field stop layer are formed, impurity ions are implanted into the rear surface of the semiconductor substrate (Step S5). Then, a first annealing process is performed to activate the impurity ions, thereby forming the p + collector layer (Step S6). Then, a proton is radiated to the rear surface of the semiconductor substrate (Step S7). Then, a second annealing process is performed to change the proton into a donor, thereby forming the field stop layer (Step S8). The first annealing process is performed at a higher annealing temperature than the second annealing process. Then, a collector electrode is formed on the rear surface of the semiconductor substrate (Step S9). Therefore, it is possible to prevent deterioration of electrical characteristics.