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公开(公告)号：EP2806461A4
公开(公告)日：2015-12-09
申请号：EP13738600
申请日：2013-01-18
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/268 , H01L21/336 , H01L29/08 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/0646 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/41708 , H01L29/49 , H01L29/6609 , H01L29/66333 , H01L29/861
摘要： After proton implantation (16) is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer (3). A disorder generated in a proton passage region (14) is reduced by a laser annealing process to form an n-type disorder reduction region (18). As such, the n-type field stop layer (3) and the n-type disorder reduction region (18) are formed by the proton implantation (16). Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.
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2.发明公开
公开(公告)号：EP2790208A4
公开(公告)日：2015-06-17
申请号：EP13763864
申请日：2013-03-14
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L21/265 , H01L21/263 , H01L21/324 , H01L21/329 , H01L21/336 , H01L29/06 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868
CPC分类号： H01L21/3223 , H01L21/263 , H01L21/324 , H01L29/0619 , H01L29/32 , H01L29/36 , H01L29/402 , H01L29/66128 , H01L29/66348 , H01L29/7397 , H01L29/8611
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公开(公告)号：EP2980856A4
公开(公告)日：2017-06-21
申请号：EP14774672
申请日：2014-03-18
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/861 , H01L21/22 , H01L21/225 , H01L21/263 , H01L21/265 , H01L21/268 , H01L21/324 , H01L21/329 , H01L29/06 , H01L29/32 , H01L29/36 , H01L29/868
CPC分类号： H01L29/872 , H01L21/221 , H01L21/225 , H01L21/2253 , H01L21/263 , H01L21/2636 , H01L21/26506 , H01L21/268 , H01L21/304 , H01L21/324 , H01L29/0619 , H01L29/0623 , H01L29/0626 , H01L29/32 , H01L29/36 , H01L29/66143 , H01L29/7395 , H01L29/8611
摘要： An n + cathode layer (4) is provided in a surface layer of the rear surface of an n - semiconductor substrate so as to extend from an active region (10) to an edge termination structure portion (11). A cathode electrode (7) is provided on the entire surface of the n + cathode layer (4). An n buffer layer (5) is provided in a portion of an n - drift region (1) which is close to the n + cathode layer (4) so as to extend from the active region (10) to the edge termination structure portion (11). A floating buried p layer (6) is provided in a portion of the n - drift region (1) which is close to the n + cathode layer (4) at a position deeper than the n + cathode layer (4) from the rear surface of the substrate. The buried p layer (6) is uniformly provided in a predetermined range in which the buried p layer (6) comes into contact with the n + cathode layer (4). An end portion (6a) of the buried p layer (6) is located inside a side surface (1a) of the n - semiconductor substrate. Therefore, it is possible to achieve soft recovery and to provide a semiconductor device with a high breakdown voltage during reverse recovery.
摘要翻译： 在n-半导体衬底的后表面的表面层中提供n +阴极层（4），以便从有源区（10）延伸到边缘终端结构部分（11）。 阴极电极（7）设置在n +阴极层（4）的整个表面上。 在n - 漂移区（1）的靠近n +阴极层（4）的部分中提供n缓冲层（5），以便从有源区（10）延伸到边缘终端结构部分 （11）。 在比n +阴极层（4）更靠近n +阴极层（4）的位置处，在n - 漂移区（1）的一部分中设置浮动掩埋p层（6） 基材的表面。 掩埋p层（6）均匀地设置在掩埋p层（6）与n +阴极层（4）接触的预定范围内。 掩埋p层（6）的端部（6a）位于n-半导体衬底的侧表面（1a）内侧。 因此，可以实现软恢复并且在反向恢复期间提供具有高击穿电压的半导体器件。
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公开(公告)号：EP2793268A4
公开(公告)日：2015-08-19
申请号：EP13769834
申请日：2013-03-29
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/265 , H01L21/329 , H01L21/336 , H01L29/08 , H01L29/66 , H01L29/78 , H01L29/868
CPC分类号： H01L29/66348 , H01L21/26 , H01L21/26513 , H01L21/3003 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/66333 , H01L29/7393 , H01L29/7397 , H01L29/8611
摘要： A p + collector layer is provided in a surface layer of a rear surface of a semiconductor substrate which will be an n- drift layer and an n + field stop layer is provided in a region which is deeper than the p + collector layer formed on the rear surface. A collector electrode comes into contact with the p + collector layer. When the p + collector layer and the n + field stop layer are formed, impurity ions are implanted into the rear surface of the semiconductor substrate (Step S5). Then, a first annealing process is performed to activate the impurity ions, thereby forming the p + collector layer (Step S6). Then, a proton is radiated to the rear surface of the semiconductor substrate (Step S7). Then, a second annealing process is performed to change the proton into a donor, thereby forming the field stop layer (Step S8). The first annealing process is performed at a higher annealing temperature than the second annealing process. Then, a collector electrode is formed on the rear surface of the semiconductor substrate (Step S9). Therefore, it is possible to prevent deterioration of electrical characteristics.
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公开(公告)号：EP2793266A4
公开(公告)日：2015-07-22
申请号：EP12857108
申请日：2012-12-14
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/263 , H01L21/265 , H01L21/329 , H01L21/336 , H01L29/78 , H01L29/868
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from the rear surface of an n-type semiconductor substrate, which is an n - drift layer, to form an n-type FS layer which has a lower resistance than the n-type semiconductor substrate in the rear surface of the n - drift layer. When the proton irradiation is performed a plurality of times in order to form the n-type FS layer, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder (7) which remains in the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder (7) which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder (7) is reduced and it is possible to prevent deterioration of characteristics, such as an increase in leakage current. In addition, it is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
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公开(公告)号：EP2800143A4
公开(公告)日：2015-06-24
申请号：EP12862913
申请日：2012-12-28
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/861 , H01L21/265 , H01L21/336 , H01L29/32 , H01L29/739 , H01L29/78 , H01L29/868
CPC分类号： H01L29/063 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： Hydrogen atoms (14) and crystal defects (15) are introduced into an n - semiconductor substrate (1) by proton implantation (13). The crystal defects (15) are generated in the n - semiconductor substrate (1) by electron beam irradiation (11) before or after the proton implantation (13). Then, a heat treatment for generating donors is performed. The amount of crystal defects (12, 15) is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects (12, 15) formed by the electron beam irradiation (11) and the proton implantation (13) are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
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公开(公告)号：EP2711986A4
公开(公告)日：2014-11-12
申请号：EP12785949
申请日：2012-05-18
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/336 , H01L29/78
CPC分类号： H01L29/7397 , H01L21/26513 , H01L21/2855 , H01L21/324 , H01L29/0615 , H01L29/0619 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/0847 , H01L29/1004 , H01L29/1095 , H01L29/167 , H01L29/36 , H01L29/4236 , H01L29/66348 , H01L29/7395
摘要： An n-type FS layer (14) has a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type FS layer (14) together with the total impurity of an n - type drift layer (1). Also, the n-type FS layer (14) has a concentration gradient such that the impurity concentration of the n-type FS layer (14) decreases from a p + type collector layer (15) toward a p-type base layer (5), and the diffusion depth is 20µm or more. Furthermore, an n + type buffer layer (13) of which the peak impurity concentration is higher than that of the n-type FS layer (14) at 6 × 10 15 cm -3 or more, and one-tenth or less of the peak impurity concentration of the p + type collector layer (15), is included between the n-type FS layer (14) and p + type collector layer (15). Because of this, it is possible to provide a field-stop (FS) insulated gate bipolar transistor such as to balance an improvement in resistance to element destruction when a short circuit occurs with suppressing thermal runaway destruction, and furthermore, to reduce variation in on-state voltage.
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公开(公告)号：EP2930741A4
公开(公告)日：2016-11-23
申请号：EP14818522
申请日：2014-06-17
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L21/322 , H01L21/263 , H01L21/268 , H01L21/329 , H01L29/861 , H01L29/868
CPC分类号： H01L29/0615 , H01L21/2605 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L29/0834 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66348 , H01L29/7397 , H01L29/861 , H01L29/868
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公开(公告)号：EP2793251A4
公开(公告)日：2015-10-21
申请号：EP13764611
申请日：2013-03-18
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L21/265 , H01L21/329 , H01L21/331 , H01L29/739 , H01L29/861
CPC分类号： H01L29/66333 , H01L21/263 , H01L21/265 , H01L21/26506 , H01L21/304 , H01L21/324 , H01L29/0619 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/402 , H01L29/66128 , H01L29/66348 , H01L29/7397 , H01L29/8611
摘要： A method for producing a semiconductor device includes an implantation step of performing proton implantation from a rear surface of a semiconductor substrate (101) of a first conductivity type and a formation step of performing an annealing process for the semiconductor substrate (101) in an annealing furnace to form a first semiconductor region of the first conductivity type which has a higher impurity concentration than the semiconductor substrate (101) after the implantation step. In the formation step, the furnace is in a hydrogen atmosphere and the volume concentration of hydrogen is in the range of 6% to 30%. Therefore, it is possible to reduce crystal defects in the generation of donors by proton implantation. In addition, it is possible to improve the rate of change into a donor.
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公开(公告)号：EP2822039A4
公开(公告)日：2015-10-07
申请号：EP13847740
申请日：2013-10-11
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/78 , H01L21/336 , H01L29/739
CPC分类号： H01L29/7397 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/41708 , H01L29/42304 , H01L29/4236 , H01L29/4238 , H01L29/4916 , H01L29/66348 , H01L29/7811 , H01L29/7813
摘要： A semiconductor device includes: a first gate electrode (22a) that is provided on a first insulating film along one side wall of a first trench (21) and is provided in a second trench (40); a shield electrode (22b) that is provided on a second insulating film along the other side wall of the first trench (21) and is provided in a third trench (50); a gate runner that is an extended portion of the second trench (40), has a portion which is provided on the first gate electrode (22a), and is connected to the first gate electrode (22a); and an emitter polysilicon layer (25a) that is an extended portion of the third trench (50), has a portion which is provided on the shield electrode (22b), and is connected to the shield electrode (22b). According to the semiconductor device, it is possible to improve turn-on characteristics with a slight increase in the number of process steps, while preventing an increase in costs and a reduction in yield.
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