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公开(公告)号：EP2790209A4
公开(公告)日：2015-07-29
申请号：EP13767446
申请日：2013-03-29
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L21/336 , H01L21/263 , H01L21/265 , H01L21/329 , H01L29/739 , H01L29/78 , H01L29/868
CPC分类号： H01L29/0638 , H01L21/263 , H01L21/265 , H01L21/26506 , H01L21/324 , H01L29/1095 , H01L29/155 , H01L29/6609 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
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公开(公告)号：EP2800143A4
公开(公告)日：2015-06-24
申请号：EP12862913
申请日：2012-12-28
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/861 , H01L21/265 , H01L21/336 , H01L29/32 , H01L29/739 , H01L29/78 , H01L29/868
CPC分类号： H01L29/063 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L21/324 , H01L29/0619 , H01L29/0834 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/7395 , H01L29/861 , H01L29/8611
摘要： Hydrogen atoms (14) and crystal defects (15) are introduced into an n - semiconductor substrate (1) by proton implantation (13). The crystal defects (15) are generated in the n - semiconductor substrate (1) by electron beam irradiation (11) before or after the proton implantation (13). Then, a heat treatment for generating donors is performed. The amount of crystal defects (12, 15) is appropriately controlled during the heat treatment for generating donors to increase a donor generation rate. In addition, when the heat treatment for generating donors ends, the crystal defects (12, 15) formed by the electron beam irradiation (11) and the proton implantation (13) are recovered and controlled to an appropriate amount of crystal defects. Therefore, for example, it is possible to improve a breakdown voltage and reduce a leakage current.
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公开(公告)号：EP2806461A4
公开(公告)日：2015-12-09
申请号：EP13738600
申请日：2013-01-18
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/268 , H01L21/336 , H01L29/08 , H01L29/78
CPC分类号： H01L29/7395 , H01L21/26506 , H01L21/26513 , H01L21/268 , H01L21/324 , H01L29/0615 , H01L29/0646 , H01L29/0804 , H01L29/0821 , H01L29/0834 , H01L29/1004 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/41708 , H01L29/49 , H01L29/6609 , H01L29/66333 , H01L29/861
摘要： After proton implantation (16) is performed, a hydrogen-induced donor is formed by a furnace annealing process to form an n-type field stop layer (3). A disorder generated in a proton passage region (14) is reduced by a laser annealing process to form an n-type disorder reduction region (18). As such, the n-type field stop layer (3) and the n-type disorder reduction region (18) are formed by the proton implantation (16). Therefore, it is possible to provide a stable and inexpensive semiconductor device which has low conduction resistance and can improve electrical characteristics, such as a leakage current, and a method for producing the semiconductor device.
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公开(公告)号：EP2793268A4
公开(公告)日：2015-08-19
申请号：EP13769834
申请日：2013-03-29
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/265 , H01L21/329 , H01L21/336 , H01L29/08 , H01L29/66 , H01L29/78 , H01L29/868
CPC分类号： H01L29/66348 , H01L21/26 , H01L21/26513 , H01L21/3003 , H01L29/32 , H01L29/36 , H01L29/66128 , H01L29/66333 , H01L29/7393 , H01L29/7397 , H01L29/8611
摘要： A p + collector layer is provided in a surface layer of a rear surface of a semiconductor substrate which will be an n- drift layer and an n + field stop layer is provided in a region which is deeper than the p + collector layer formed on the rear surface. A collector electrode comes into contact with the p + collector layer. When the p + collector layer and the n + field stop layer are formed, impurity ions are implanted into the rear surface of the semiconductor substrate (Step S5). Then, a first annealing process is performed to activate the impurity ions, thereby forming the p + collector layer (Step S6). Then, a proton is radiated to the rear surface of the semiconductor substrate (Step S7). Then, a second annealing process is performed to change the proton into a donor, thereby forming the field stop layer (Step S8). The first annealing process is performed at a higher annealing temperature than the second annealing process. Then, a collector electrode is formed on the rear surface of the semiconductor substrate (Step S9). Therefore, it is possible to prevent deterioration of electrical characteristics.
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公开(公告)号：EP2793266A4
公开(公告)日：2015-07-22
申请号：EP12857108
申请日：2012-12-14
申请人： FUJI ELECTRIC CO LTD
IPC分类号： H01L29/739 , H01L21/263 , H01L21/265 , H01L21/329 , H01L21/336 , H01L29/78 , H01L29/868
CPC分类号： H01L29/0615 , H01L21/263 , H01L29/1095 , H01L29/32 , H01L29/36 , H01L29/6609 , H01L29/66333 , H01L29/66348 , H01L29/7395 , H01L29/7397 , H01L29/861
摘要： Proton irradiation is performed a plurality of times from the rear surface of an n-type semiconductor substrate, which is an n - drift layer, to form an n-type FS layer which has a lower resistance than the n-type semiconductor substrate in the rear surface of the n - drift layer. When the proton irradiation is performed a plurality of times in order to form the n-type FS layer, the next proton irradiation is performed to as to compensate for a reduction in mobility due to disorder (7) which remains in the previous proton irradiation. In this case, the second or subsequent proton irradiation is performed at the position of the disorder (7) which is formed by the previous proton irradiation. In this way, even after proton irradiation and a heat treatment, the disorder (7) is reduced and it is possible to prevent deterioration of characteristics, such as an increase in leakage current. In addition, it is possible to form an n-type FS layer including a high-concentration hydrogen-related donor layer.
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