发明公开
- 专利标题： MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS
- 专利标题（中）： 存储器单元及其制造方法该存储单元
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申请号： EP13870616.3申请日： 2013-12-11
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公开(公告)号： EP2943982A1公开(公告)日： 2015-11-18
- 发明人: YASUDA, Shuichiro , ROCKLEIN, Noel , SILLS, Scott, E. , RAMASWAMY, D.V., Nirmal , TAO, Qian
- 申请人： Micron Technology, Inc.
- 申请人地址： 8000 South Federal Way Boise, ID 83716 US
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： 8000 South Federal Way Boise, ID 83716 US
- 代理机构： Somervell, Thomas Richard
- 优先权： US201313738201 20130110
- 国际公布： WO2014109859 20140717
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
摘要：
Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.
公开/授权文献
- EP2943982B1 MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS 公开/授权日：2018-03-14
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