公开(公告)号：EP2335276B1

公开(公告)日：2015-02-25

申请号：EP09820968.7

申请日：2009-09-10

申请人： Micron Technology, Inc.

发明人： ROCKLEIN, Noel ,  CARLSON, Chris, M. ,  PETERSON, Dave ,  YANG, Cunyu ,  VAIDYANATHAN, Praveen ,  BHAT, Vishwanath

IPC分类号： H01L21/314 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/51 ,  H01L21/28 ,  H01L21/02 ,  H01L49/02 ,  H01L29/78

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

公开(公告)号：EP2335276A1

公开(公告)日：2011-06-22

申请号：EP09820968.7

申请日：2009-09-10

申请人： Micron Technology, Inc.

发明人： ROCKLEIN, Noel ,  CARLSON, Chris, M. ,  PETERSON, Dave ,  YANG, Cunyu ,  VAIDYANATHAN, Praveen ,  BHAT, Vishwanath

IPC分类号： H01L21/31 ,  H01L21/8242 ,  H01L27/108

CPC分类号： H01L21/28273 ,  H01L21/02175 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3142 ,  H01L27/10852 ,  H01L28/40 ,  H01L28/91 ,  H01L29/51 ,  H01L29/513 ,  H01L29/78

摘要： Some embodiments include dielectric structures. The structures include first and second portions that are directly against one another. The first portion may contain a homogeneous mixture of a first phase and a second phase. The first phase may have a dielectric constant of greater than or equal to 25, and the second phase may have a dielectric constant of less than or equal to 20. The second portion may be entirely a single composition having a dielectric constant of greater than or equal to 25. Some embodiments include electrical components, such as capacitors and transistors, containing dielectric structures of the type described above. Some embodiments include methods of forming dielectric structures, and some embodiments include methods of forming electrical components.

公开(公告)号：EP2943982B1

公开(公告)日：2018-03-14

申请号：EP13870616.3

申请日：2013-12-11

申请人： Micron Technology, Inc.

发明人： YASUDA, Shuichiro ,  ROCKLEIN, Noel ,  SILLS, Scott, E. ,  RAMASWAMY, D.V., Nirmal ,  TAO, Qian

IPC分类号： H01L45/00

CPC分类号： H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

公开(公告)号：EP2943982A1

公开(公告)日：2015-11-18

申请号：EP13870616.3

申请日：2013-12-11

申请人： Micron Technology, Inc.

发明人： YASUDA, Shuichiro ,  ROCKLEIN, Noel ,  SILLS, Scott, E. ,  RAMASWAMY, D.V., Nirmal ,  TAO, Qian

IPC分类号： H01L27/115 ,  H01L21/8247

CPC分类号： H01L45/1616 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/147

摘要： Some embodiments include a method of forming a memory cell. A first portion of a switching region is formed over a first electrode. A second portion of the switching region is formed over the first portion using atomic layer deposition. The second portion is a different composition than the first portion. An ion source region is formed over the switching region. A second electrode is formed over the ion source region. Some embodiments include a memory cell having a switching region between a pair of electrodes. The switching region is configured to be reversibly transitioned between a low resistive state and a high resistive state. The switching region includes two or more discrete portions, with one of the portions not having a non-oxygen component in common with any composition directly against it in the high resistive state.

公开(公告)号：EP2016616A1

公开(公告)日：2009-01-21

申请号：EP07761689.4

申请日：2007-05-01

申请人： Micron Technology, Inc.

发明人： KRISHNAN, Rishikesh ,  GEALY, Dan ,  SRIVIDYA, Vidya ,  ROCKLEIN, Noel

IPC分类号： H01L21/02 ,  H01L21/8242

CPC分类号： H01G4/255 ,  H01L27/10852 ,  H01L28/65

摘要： Electrical components for microelectronic devices and methods for forming electrical components. One particular embodiment of such a method comprises depositing an underlying layer onto a workpiece, and forming a conductive layer on the underlying layer. The method can continue by disposing a dielectric layer on the conductive layer. The underlying layer is a material that causes the dielectric layer to have a higher dielectric constant than without the underlying layer being present under the conductive layer. For example, the underlying layer can impart a structure or another property to the film stack that causes an otherwise amorphous dielectric layer to crystallize without having to undergo a separate high temperature annealing process after disposing the dielectric layer onto the conductive layer. Several examples of this method are expected to be very useful for forming dielectric layers with high dielectric constants because they avoid using a separate high temperature annealing process.