发明公开
EP2965094A1 SENSOR DEVICE COMPRISING INERTIAL SENSOR MODULES USING MOVING-GATE TRANSDUCERS AND A D OF MANUFACTURING SUCH INERTIAL SENSOR MODULES
审中-公开
与MOVING GATE转换器和用于制备这种惯性传感器模块惯性传感器模块传感器装置
- 专利标题： SENSOR DEVICE COMPRISING INERTIAL SENSOR MODULES USING MOVING-GATE TRANSDUCERS AND A D OF MANUFACTURING SUCH INERTIAL SENSOR MODULES
- 专利标题（中）： 与MOVING GATE转换器和用于制备这种惯性传感器模块惯性传感器模块传感器装置
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申请号： EP13814297.1申请日： 2013-12-02
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公开(公告)号： EP2965094A1公开(公告)日： 2016-01-13
- 发明人: FEYH, Ando , CHEN, Po-Jui
- 申请人： Robert Bosch GmbH , Feyh, Ando
- 申请人地址： Postfach 30 02 20 Wernerstrasse 1, 70442 Stuttgart DE
- 专利权人： Robert Bosch GmbH,Feyh, Ando
- 当前专利权人： Robert Bosch GmbH,Feyh, Ando
- 当前专利权人地址： Postfach 30 02 20 Wernerstrasse 1, 70442 Stuttgart DE
- 代理机构： Bee, Joachim
- 优先权： US201261733544P 20121205
- 国际公布： WO2014088977 20140612
- 主分类号： G01P15/08
- IPC分类号： G01P15/08 ; B81B5/00 ; B81C1/00 ; G01C19/5719 ; G01P15/12 ; G01P15/18
摘要：
A sensor device includes a first CMOS chip and a second CMOS chip with a first moving-gate transducer formed in the first CMOS chip for implementing a first 3-axis inertial sensor and a second moving-gate transducer formed in the second CMOS chip for implementing a second 3-axis inertial sensor. An ASIC for evaluating the outputs of the first 3-axis inertial sensor and the second 3-axis inertial sensor is distributed between the first CMOS chip and the second CMOS chip.
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