发明公开
EP3038163A1 A GROUP III-N LATERAL SCHOTTKY BARRIER DIODE AND A METHOD FOR MANUFACTURING THEREOF
审中-公开
EINE SEITLICHE肖特基 - 巴里耶德·迪尔·格拉夫三世NER VERFAHREN ZUR HERSTELLUNG DAVON
- 专利标题： A GROUP III-N LATERAL SCHOTTKY BARRIER DIODE AND A METHOD FOR MANUFACTURING THEREOF
- 专利标题（中）： EINE SEITLICHE肖特基 - 巴里耶德·迪尔·格拉夫三世NER VERFAHREN ZUR HERSTELLUNG DAVON
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申请号： EP15197325.2申请日： 2015-12-01
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公开(公告)号： EP3038163A1公开(公告)日： 2016-06-29
- 发明人: Hu, Jie
- 申请人： IMEC VZW , Katholieke Universiteit Leuven
- 申请人地址： Kapeldreef 75 3001 Leuven BE
- 专利权人： IMEC VZW,Katholieke Universiteit Leuven
- 当前专利权人： IMEC VZW,Katholieke Universiteit Leuven
- 当前专利权人地址： Kapeldreef 75 3001 Leuven BE
- 代理机构： Patent Department IMEC
- 优先权： EP14200017 20141223
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L29/205 ; H01L29/417 ; H01L21/329
摘要：
A group III-N lateral Schottky diode is disclosed comprising a substrate (2), a nucleation layer (3) formed on the substrate (2), a buffer layer (4) formed on the nucleation layer (3), a group III-N channel stack (5) formed on the buffer layer (4), formed on the channel stack (5) a group III-N barrier (6) containing Aluminium whereby the Aluminium content of the barrier (6) decreases towards the channel stack (5), a passivation layer (8) formed on the group III-N barrier (6), a cathode (11) formed in an opening (9) through the passivation layer (8) whereby the opening (9) at least extends to the barrier (6), and; an anode (13) formed in another opening (10) through the passivation layer (8) thereby partially extending into the barrier (6), the anode forming a Schottky contact with the barrier (6).
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