- 专利标题： METHOD OF FORMING A METAL OXIDE SEMICONDUCTOR SENSOR USING ATOMIC LAYER DEPOSITION AND CORRESPONDING METAL OXIDE SEMICONDUCTOR SENSOR
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申请号： EP14856905.6申请日： 2014-10-30
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公开(公告)号： EP3063791B1公开(公告)日： 2018-05-30
- 发明人: SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
- 申请人： Robert Bosch GmbH
- 申请人地址： Postfach 30 02 20 70442 Stuttgart DE
- 专利权人： Robert Bosch GmbH
- 当前专利权人： Robert Bosch GmbH
- 当前专利权人地址： Postfach 30 02 20 70442 Stuttgart DE
- 优先权： US201361897269P 20131030
- 国际公布： WO2015066289 20150507
- 主分类号： H01L27/14
- IPC分类号： H01L27/14 ; H01L29/94 ; H01L21/205 ; G01N27/12 ; G01N27/16 ; G01N27/22
摘要：
A semiconductor sensor device includes a substrate, a non-suitable seed layer located above the substrate, at least one electrode located above the non-suitable seed layer, and a porous sensing layer supported directly by the non-suitable seed layer and in electrical communication with the at least one electrode, the porous sensing layer defining a plurality of grain boundaries formed by spaced-apart nucleation on the non-suitable seed layer using atomic layer deposition.
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