公开(公告)号：EP3507238B1

公开(公告)日：2020-10-07

申请号：EP17751727.3

申请日：2017-08-10

申请人： Robert Bosch GmbH

发明人： SAMARAO, Ashwin ,  YEE, Seow Yuen ,  LAERMER, Franz ,  YAMA, Gary

IPC分类号： B81B3/00 ,  B81C1/00

公开(公告)号：EP3230702B1

公开(公告)日：2020-03-04

申请号：EP15866993.7

申请日：2015-12-10

申请人： Robert Bosch GmbH

发明人： SAMARAO, Ashwin, K. ,  O'BRIEN, Gary ,  FEYH, Ando ,  PURKL, Fabian ,  YAMA, Gary

IPC分类号： G01J5/20 ,  G01J5/02 ,  G01J5/08 ,  H01L31/101 ,  H01L31/02 ,  H01L31/0224 ,  H01L27/146 ,  H01L31/11

公开(公告)号：EP3397587B1

公开(公告)日：2019-11-20

申请号：EP16822697.5

申请日：2016-12-29

申请人： Robert Bosch GmbH

发明人： STEHLE, Jochen ,  YAMA, Gary

IPC分类号： B81C1/00

公开(公告)号：EP2973685A1

公开(公告)日：2016-01-20

申请号：EP14774321.5

申请日：2014-03-13

申请人： Robert Bosch GmbH

发明人： SAMARAO, Ashwin ,  O'BRIEN, Gary ,  FEYH, Ando ,  YAMA, Gary ,  GRAHAM, Andrew ,  KIM, Bongsang ,  PURKL, Fabian

IPC分类号： H01L23/12 ,  H01L21/322 ,  B81B7/02

CPC分类号： B81C1/00285 ,  B81C2201/0115 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/035 ,  H01L21/3223 ,  H01L21/3225 ,  H01L23/28

摘要： A microelectromechanical system (MEMS) device includes a high density getter. The high density getter includes a silicon surface area formed by porosification or by the formation of trenches within a sealed cavity of the device. The silicon surface area includes a deposition of titanium or other gettering material to reduce the amount of gas present in the sealed chamber such that a low pressure chamber is formed. The high density getter is used in bolometers and gyroscopes but is not limited to those devices.

公开(公告)号：EP2973662A1

公开(公告)日：2016-01-20

申请号：EP14769588.6

申请日：2014-03-08

申请人： Robert Bosch GmbH

发明人： FEYH, Ando ,  PURKL, Fabian ,  GRAHAM, Andrew ,  YAMA, Gary

IPC分类号： H01L21/205

CPC分类号： B81C1/00809 ,  B81C2201/016 ,  H01L21/02601 ,  H01L23/3192 ,  H01L45/146 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al
2 O
3 ) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.

公开(公告)号：EP2972263A1

公开(公告)日：2016-01-20

申请号：EP14767515.1

申请日：2014-03-09

申请人： Robert Bosch GmbH

发明人： O'BRIEN, Gary ,  FEYH, Ando ,  GRAHAM, Andrew ,  SAMARAO, Ashwin ,  YAMA, Gary

IPC分类号： G01N27/22

CPC分类号： G01N27/223 ,  B81B7/0006 ,  B81B2201/0292 ,  G01N27/225

摘要： A trenched base capacitive humidity sensor includes a plurality of trenches formed in a conductive layer, such as polysilicon or metal, on a substrate. The trenches are arranged parallel to the each other and partition the conductive layer into a plurality of trenched silicon electrodes. At least two trenched silicon electrodes are configured to form a capacitive humidity sensor. The trenches that define the trenched silicon electrodes can be filled partially (
e.g. , sidewall coverage) or completely with polyimide (PI) or silicon nitride (SiN). A polyimide layer may also be provided on the conductive layer over the trenches and trenched electrodes. The trenches and the trenched silicon electrodes may have different widths to enable different sensor characteristics in the same structure.

摘要翻译： 沟底基电容式湿度传感器包括在基板上形成在诸如多晶硅或金属的导电层中的多个沟槽。 沟槽彼此平行地布置并且将导电层分隔成多个沟槽硅电极。 至少两个沟槽硅电极被配置成形成电容式湿度传感器。 限定沟槽硅电极的沟槽可以部分地（例如，侧壁覆盖）填充或完全用聚酰亚胺（Pl）或氮化硅（SiN）填充。 也可以在沟槽和沟槽电极上的导电层上设置聚酰亚胺层。 沟槽和沟槽硅电极可以具有不同的宽度，以实现相同结构中不同的传感器特性。

公开(公告)号：EP2971241A2

公开(公告)日：2016-01-20

申请号：EP14801566.2

申请日：2014-03-08

申请人： Robert Bosch GmbH

发明人： FEYH, Ando ,  PURKL, Fabian ,  SAMARAO, Ashwin ,  YAMA, Gary ,  O'BRIEN, Gary

IPC分类号： C23C28/00 ,  C23C16/455

CPC分类号： B81C1/00095 ,  B81B7/0006 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/02601 ,  H01L21/3142 ,  H01L45/146

摘要： An anisotropic conductor and a method of fabrication thereof. The anisotropic conductor includes an insulating matrix and a plurality of nanoparticles disposed therein. A first portion of the plurality of nanoparticles provides a conductor when subjected to a voltage and/or current pulse. A second portion of the plurality of the nanoparticles does not form a conductor when the voltage and or current pulse is applied to the first portion. The anisotropic conductor forms a conductive path between conductors of electronic devices, components, and systems, including microelectromechanical systems (MEMS) devices, components, and systems.

公开(公告)号：EP2822892A2

公开(公告)日：2015-01-14

申请号：EP13711519.2

申请日：2013-03-08

申请人： Robert Bosch GmbH ,  Yama, Gary ,  Purkl, Fabian ,  Liger, Matthieu ,  Illing, Matthias

发明人： YAMA, Gary ,  PURKL, Fabian ,  LIGER, Matthieu ,  ILLING, Matthias

IPC分类号： B81C1/00 ,  G01J5/02 ,  G01J5/20 ,  H01L27/146 ,  B81B3/00

CPC分类号： B81C1/00039 ,  B81B3/007 ,  B81B2201/0207 ,  B81B2203/0307 ,  B81C2201/0181 ,  G01J5/023 ,  H01L27/14649 ,  H01L27/14683

摘要： In one embodiment, a method of forming a semiconductor device includes providing a substrate, forming a sacrificial layer above the substrate layer, forming a first trench in the sacrificial layer, forming a first sidewall layer with a thickness of less than about 50 nm on a first sidewall of the first trench using atomic layer deposition (ALD), and removing the sacrificial layer.

公开(公告)号：EP2697156A1

公开(公告)日：2014-02-19

申请号：EP12716951.4

申请日：2012-04-13

申请人： Robert Bosch GmbH

发明人： GRAHAM, Andrew, B. ,  YAMA, Gary ,  O'BRIEN, Gary

IPC分类号： B81C1/00

CPC分类号： B81C1/00103 ,  B81B2203/0376 ,  B81C2201/0104

摘要： A method of shaping a substrate in one embodiment includes providing a first support layer, providing a first shaping pattern on the first support layer, providing a substrate on the first shaping pattern, performing a first chemical mechanical polishing (CMP) process on the substrate positioned on the first shaping pattern, and removing the once polished substrate from the first shaping pattern.

公开(公告)号：EP1917207A2

公开(公告)日：2008-05-07

申请号：EP06786620.2

申请日：2006-07-07

申请人： ROBERT BOSCH GMBH

发明人： YAMA, Gary

IPC分类号： B81C5/00

CPC分类号： B81C1/00333

摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes a buried polysilicon layer and a 'protective layer' deposited over the buried polysilicon layer to prevent possible erosion of, or damage to the buried polysilicon layer during processing steps. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

摘要翻译： 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 实施例还包括掩埋多晶硅层和沉积在掩埋多晶硅层上的“保护层”，以防止在处理步骤期间可能的侵蚀或损坏埋置的多晶硅层。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖度，在经受后续加工时保持其完整性，不会显着和/或不利地影响 腔室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。