发明公开
- 专利标题： SEMICONDUCTOR DEVICE
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申请号： EP14824341申请日： 2014-01-29
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公开(公告)号： EP3101685A4公开(公告)日： 2018-03-14
- 发明人: IGRARASHI TAKAYUKI , FUMAYA TAKUO
- 申请人： RENESAS ELECTRONICS CORP
- 专利权人： RENESAS ELECTRONICS CORP
- 当前专利权人： RENESAS ELECTRONICS CORP
- 优先权： JP2014051982 2014-01-29
- 主分类号： H01L21/822
- IPC分类号： H01L21/822 ; H01L23/00 ; H01L23/495 ; H01L23/522 ; H01L23/532 ; H01L27/04 ; H01L27/06 ; H01L27/12
摘要：
Characteristics of a semiconductor device are improved. A semiconductor device includes a coil CL1 and a wiring M2 formed on an interlayer insulator IL2, a wiring M3 formed on an interlayer insulator IL3, and a coil CL2 and a wiring M4 formed on the interlayer insulator IL4. Moreover, a distance DM4 between the coil CL2 and the wiring M4 is longer than a distance DM3 between the coil CL2 and the wiring M3 (DM4 > DM3). Furthermore, the distance DM3 between the coil CL2 and the wiring M3 is set to be longer than a sum of a film thickness of the interlayer insulator IL3 and a film thickness of the interlayer insulator IL4, which are positioned between the coil CL1 and the coil; CL2. In this manner, it is possible to improve an insulation withstand voltage between the coil CL2 and the wiring M4 or the like, where a high voltage difference tend to occur. Moreover, a transformer formation region 1A and a seal ring formation region 1C surrounding a peripheral circuit formation region 1B are formed so as to improve the moisture resistance.
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