发明公开
EP3144293A1 COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
审中-公开
LINK铜为原料的薄膜和方法用于生产薄膜的形成
- 专利标题: COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
- 专利标题(中): LINK铜为原料的薄膜和方法用于生产薄膜的形成
-
申请号: EP15793276.5申请日: 2015-04-08
-
公开(公告)号: EP3144293A1公开(公告)日: 2017-03-22
- 发明人: YOSHINO, Tomoharu , ENZU, Masaki , SAKURAI, Atsushi , NISHIDA, Akihiro , OKABE, Makoto
- 申请人: Adeka Corporation
- 申请人地址: 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 专利权人: Adeka Corporation
- 当前专利权人: Adeka Corporation
- 当前专利权人地址: 2-35, Higashiogu 7-chome Arakawa-ku Tokyo 116-8554 JP
- 代理机构: Kador & Partner
- 优先权: JP2014100611 20140514
- 国际公布: WO2015174173 20151119
- 主分类号: C07C215/08
- IPC分类号: C07C215/08 ; C23C16/18 ; H01L21/28 ; H01L21/285 ; C07F1/08
摘要:
This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.
公开/授权文献
信息查询