发明公开
- 专利标题: PSEUDO DUAL PORT MEMORY
- 专利标题(中): PSEUDO双端口存储器
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申请号: EP15748352.0申请日: 2015-07-20
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公开(公告)号: EP3195318A1公开(公告)日: 2017-07-26
- 发明人: YOON, Sei Seung , KWOK, Tony Chung Yiu , JUNG, Changho , DESAI, Nishith Nitin
- 申请人: Qualcomm Incorporated
- 申请人地址: 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人: Qualcomm Incorporated
- 当前专利权人: Qualcomm Incorporated
- 当前专利权人地址: 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构: Schmidbauer, Andreas Konrad
- 优先权: US201414464627 20140820
- 国际公布: WO2016028424 20160225
- 主分类号: G11C7/10
- IPC分类号: G11C7/10 ; G11C8/16
摘要:
A memory and a method for operating the memory provided. In one aspect, the memory may be a PDP memory. The memory includes a control circuit configured to generate a first clock and a second clock in response an edge of a clock for an access cycle. A first input circuit is configured to receive an input for a first memory access based on the first clock. The first input circuit includes a latch. The second input circuit configured to receive an input for a second memory access based on the second clock. The second input circuit includes a flip-flop.
公开/授权文献
- EP3195318B1 PSEUDO DUAL PORT MEMORY 公开/授权日:2018-04-18
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