发明公开
EP3199666A1 AQUEOUS INDIUM OR INDIUM ALLOY PLATING BATH AND PROCESS FOR DEPOSITION OF INDIUM OR AN INDIUM ALLOY
审中-公开
水合铟或铟合金电镀浴和沉积铟或铟合金的方法
- 专利标题： AQUEOUS INDIUM OR INDIUM ALLOY PLATING BATH AND PROCESS FOR DEPOSITION OF INDIUM OR AN INDIUM ALLOY
- 专利标题（中）： 水合铟或铟合金电镀浴和沉积铟或铟合金的方法
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申请号： EP16153379.9申请日： 2016-01-29
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公开(公告)号： EP3199666A1公开(公告)日： 2017-08-02
- 发明人: Sperling, Jan , Pieper, Stefan , Vazhenin, Grigory , Castellani, Mauro , Kirbs, Andreas , Rohde, Dirk
- 申请人： Atotech Deutschland GmbH
- 申请人地址： Erasmusstraße 20 10553 Berlin DE
- 专利权人： Atotech Deutschland GmbH
- 当前专利权人： Atotech Deutschland GmbH
- 当前专利权人地址： Erasmusstraße 20 10553 Berlin DE
- 主分类号： C25D3/54
- IPC分类号： C25D3/54 ; C25D3/56 ; C25D5/10 ; C25D5/18 ; C25D5/48 ; C25D5/40
摘要：
An aqueous indium or indium alloy plating bath comprising
- a source of indium ions,
- an acid,
- a source of halide ions,
- a surfactant according to formula (I)
wherein A is selected from branched or unbranched C 10 -C 15 -alkyl;
B is selected from the group consisting of hydrogen and alkyl;
m is an integer ranging from 5 to 25;
each R is independently from each other selected from hydrogen and methyl; and
- a dihydroxybenzene derivative of formula (II)
wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro;
n is an integer ranging from 1 to 4,
and a process for deposition of indium or an indium alloy wherein said bath is used.
- a source of indium ions,
- an acid,
- a source of halide ions,
- a surfactant according to formula (I)
wherein A is selected from branched or unbranched C 10 -C 15 -alkyl;
B is selected from the group consisting of hydrogen and alkyl;
m is an integer ranging from 5 to 25;
each R is independently from each other selected from hydrogen and methyl; and
- a dihydroxybenzene derivative of formula (II)
wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro;
n is an integer ranging from 1 to 4,
and a process for deposition of indium or an indium alloy wherein said bath is used.
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