公开(公告)号：EP3199666B1

公开(公告)日：2018-09-26

申请号：EP16153379.9

申请日：2016-01-29

申请人： Atotech Deutschland GmbH

发明人： Sperling, Jan ,  Pieper, Stefan ,  Vazhenin, Grigory ,  Castellani, Mauro ,  Kirbs, Andreas ,  Rohde, Dirk

IPC分类号： C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D5/40

CPC分类号： C25D5/12 ,  C25D3/38 ,  C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D5/18 ,  C25D5/40 ,  C25D5/48 ,  C25D5/505

摘要： An aqueous indium or indium alloy plating bath comprising - a source of indium ions, - an acid, - a source of halide ions, - a surfactant according to formula (I) wherein A is selected from branched or unbranched C 10 -C 15 -alkyl; B is selected from the group consisting of hydrogen and alkyl; m is an integer ranging from 5 to 25; each R is independently from each other selected from hydrogen and methyl; and - a dihydroxybenzene derivative of formula (II) wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro; n is an integer ranging from 1 to 4, and a process for deposition of indium or an indium alloy wherein said bath is used.

公开(公告)号：EP3199666A1

公开(公告)日：2017-08-02

申请号：EP16153379.9

申请日：2016-01-29

申请人： Atotech Deutschland GmbH

发明人： Sperling, Jan ,  Pieper, Stefan ,  Vazhenin, Grigory ,  Castellani, Mauro ,  Kirbs, Andreas ,  Rohde, Dirk

IPC分类号： C25D3/54 ,  C25D3/56 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D5/40

CPC分类号： C25D5/10 ,  C25D3/54 ,  C25D3/56 ,  C25D5/18 ,  C25D5/40 ,  C25D5/48

摘要： An aqueous indium or indium alloy plating bath comprising
- a source of indium ions,
- an acid,
- a source of halide ions,
- a surfactant according to formula (I)

wherein A is selected from branched or unbranched C 10 -C 15 -alkyl;
B is selected from the group consisting of hydrogen and alkyl;
m is an integer ranging from 5 to 25;
each R is independently from each other selected from hydrogen and methyl; and

- a dihydroxybenzene derivative of formula (II)

wherein each X is independently selected from fluorine, chlorine, bromine, iodine, alkoxy, and nitro;
n is an integer ranging from 1 to 4,

and a process for deposition of indium or an indium alloy wherein said bath is used.

摘要翻译： 一种含水铟或铟合金镀液，包括 - 铟离子源， - 酸， - 卤化物离子源， - 式（I）表示的表面活性剂，其中A选自支化或未支化的C 10 -C 15烷基; B选自氢和烷基; m是5至25的整数; 每个R彼此独立地选自氢和甲基; 和 - 式（II）的二羟基苯衍生物，其中每个X独立地选自氟，氯，溴，碘，烷氧基和硝基; n是1至4的整数，以及使用所述浴的沉积铟或铟合金的方法。

公开(公告)号：EP3456870A1

公开(公告)日：2019-03-20

申请号：EP17190805.6

申请日：2017-09-13

申请人： Atotech Deutschland GmbH

发明人： Gaida, Josef ,  Sperling, Jan ,  Castellani, Mauro ,  Vazhenin, Grigory ,  Ackermann, Stefanie ,  Brunner, Heiko ,  Rohde, Dirk

IPC分类号： C25D3/12 ,  C07C2/50 ,  C25D3/56 ,  C25D7/12 ,  C25D7/00 ,  H05K3/42

摘要： An aqueous bath for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy, the bath comprising
- a source of nickel ions, and optionally a source of ions of at least one alloying metal,
- at least one buffering agent,
- at least one of a dimer of a compound of formula (I) or mixtures thereof

wherein
R 1 is a substituted or unsubstituted alkenyl group,
R 2 may be present or not, and if present R 2 is a -(CH 2 ) n -SO 3 - group, wherein n is an integer in the range of 1-6, and wherein one or more of the hydrogens in the group may be replaced by a substituent, preferably hydroxide; and
a method for filling a vertical interconnect access or trench of a work piece with nickel or a nickel alloy with said aqueous bath.

公开(公告)号：EP2709160B1

公开(公告)日：2016-03-30

申请号：EP12184514.3

申请日：2012-09-14

申请人： Atotech Deutschland GmbH

发明人： Voss, Dr. Torsten ,  Matejat, Kai-Jens ,  Sperling, Jan ,  Lamprecht, Sven ,  Schoenenberger, Catherine

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L21/2885 ,  H01L24/11 ,  H01L31/1804 ,  H01L31/1876 ,  H01L31/1884 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/1111 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13639 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a metallization method for solar cell substrates by electroplating wherein i) a resist is deposited onto at least one surface of a solar cell substrate and patterned, ii) a conductive seed layer is deposited onto the patterned resist and into the openings formed by the resist pattern, iii) a first metal or metal alloy is electroplated onto the conductive seed layer, and iv) those portions of the first metal or metal alloy layer deposited onto the patterned resist are removed.

公开(公告)号：EP2709160A1

公开(公告)日：2014-03-19

申请号：EP12184514.3

申请日：2012-09-14

申请人： Atotech Deutschland GmbH

发明人： Voss, Dr. Torsten ,  Matejat, Kai-Jens ,  Sperling, Jan ,  Lamprecht, Sven ,  Schoenenberger, Catherine

IPC分类号： H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/022425 ,  H01L21/2885 ,  H01L24/11 ,  H01L31/1804 ,  H01L31/1876 ,  H01L31/1884 ,  H01L2224/11005 ,  H01L2224/11009 ,  H01L2224/1111 ,  H01L2224/13562 ,  H01L2224/13611 ,  H01L2224/13639 ,  Y02E10/50 ,  Y02P70/521

摘要： The present invention relates to a metallization method for solar cell substrates by electroplating wherein i) a resist is deposited onto at least one surface of a solar cell substrate and patterned, ii) a conductive seed layer is deposited onto the patterned resist and into the openings formed by the resist pattern, iii) a first metal or metal alloy is electroplated onto the conductive seed layer, and iv) those portions of the first metal or metal alloy layer deposited onto the patterned resist are removed.

摘要翻译： 本发明涉及通过电镀的太阳能电池基板的金属化方法，其中i）将抗蚀剂沉积在太阳能电池基板的至少一个表面上并进行图案化，ii）将导电种子层沉积到图案化的抗蚀剂上并进入开口 通过抗蚀剂图案形成，iii）将第一金属或金属合金电镀到导电种子层上，并且iv）去除沉积到图案化抗蚀剂上的第一金属或金属合金层的那些部分。