发明公开
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: EP17000658.9申请日: 2017-04-18
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公开(公告)号: EP3300463A1公开(公告)日: 2018-03-28
- 发明人: IKEDA, Osamu , KUSHIMA, Takayuki , OKUBO, Shinji , MIYAZAKI, Takaaki
- 申请人: Hitachi Power Semiconductor Device, Ltd.
- 申请人地址: 2-2 Omika-cho 5-chome Hitachi-shi, Ibaraki 319-1221 JP
- 专利权人: Hitachi Power Semiconductor Device, Ltd.
- 当前专利权人: Hitachi Power Semiconductor Device, Ltd.
- 当前专利权人地址: 2-2 Omika-cho 5-chome Hitachi-shi, Ibaraki 319-1221 JP
- 代理机构: Strehl Schübel-Hopf & Partner
- 优先权: JP2016186537 20160926
- 主分类号: H05K1/02
- IPC分类号: H05K1/02 ; H01L23/60 ; H01L23/31 ; H01L23/34 ; H01L23/24
摘要:
A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.
公开/授权文献
- EP3300463B1 SEMICONDUCTOR DEVICE 公开/授权日:2019-03-20
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