公开(公告)号：EP4404454A1

公开(公告)日：2024-07-24

申请号：EP22869629.0

申请日：2022-05-10

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： MIMA, Akira ,  KAGEYAMA, Hiroshi ,  ARAI,Taiga ,  SAITO, Katsuaki ,  KAWASE, Daisuke ,  WADA, Takashi

IPC分类号： H02M7/48

CPC分类号： H02M7/48

摘要： Provided is a semiconductor module overcurrent detection device that, with a relatively simple circuit configuration, is capable of highly accurately detecting short-circuit current of a power semiconductor element in a semiconductor module that is configured by connecting a plurality of inverter circuits in parallel. A semiconductor module overcurrent detection device according the present invention detects an overcurrent of a semiconductor module in a parallel connection configuration that has a first inverter circuit on which a first upper arm and a first lower arm are mounted and a second inverter circuit which is connected in parallel with the first inverter circuit and on which a second upper arm and a second lower arm are mounted. The semiconductor module overcurrent detection device is characterized in that: the first inverter circuit has a first output terminal between the emitter of the first upper arm and the collector of the first lower arm; the second inverter circuit has a second output terminal between the emitter of the second upper arm and the collector of the second lower arm; the first output terminal and the second output terminal are connected via a wire; an output wire to the outside is attached at the middle point between the first output terminal and the second output terminal; the wire inductance between the first output terminal and the middle point is substantially equal to the wire inductance between the second output terminal and the middle point; the potential difference between the first output terminal and the second output terminal is detected; and when the detected potential difference is larger than a predetermined threshold value, it is determined that an overcurrent is generated.

公开(公告)号：EP4358128A1

公开(公告)日：2024-04-24

申请号：EP22824703.7

申请日：2022-05-09

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： NISHIMORI, Hitoshi ,  HORIUCHI, Keisuke ,  NAKAZATO, Norio ,  KAWASE, Daisuke ,  SASAKI, Koji

IPC分类号： H01L23/36 ,  H01L25/07 ,  H01L25/18

CPC分类号： H01L23/36 ,  H01L25/18 ,  H01L25/07

摘要： The present invention can provide a power semiconductor module in which space for storing heat-conductive grease between a heat sink and a cooler is ensured while ensuring sufficient contact area between the heat sink and the cooler. The power semiconductor module of the present invention is characterized by comprising a base plate (15), a semiconductor chip (11) mounted on a first main surface of the base plate, and a heat sink (22) connected to a second main surface of the base plate (15), wherein: a chamfered part is provided at an end portion of at least one side of the second main surface; and, when the cross section of the base plate (15) is viewed in a state in which the base plate (15) is fixed to the heat sink (22), the slope of the second main surface of the base plate (15) is discontinuous at the boundary between the chamfered part and an area of the second main surface other than the chambered part, and the angle between the bottom surface (15e) of the chamfered part of the base plate (15) and the surface on the side of the heat sink (22) where the base plate (15) is fixed is 5° to 30°.

公开(公告)号：EP3160047B1

公开(公告)日：2023-03-08

申请号：EP16194871.6

申请日：2016-10-20

发明人： ISHIMARU, Tetsuya ,  KURITA, Shinichi ,  TERAKAWA, Takeshi

IPC分类号： H03K17/082 ,  H03K17/687 ,  H02M1/08 ,  H03K17/30 ,  H02M7/219

公开(公告)号：EP2852059B1

公开(公告)日：2018-10-10

申请号：EP14180728.9

申请日：2014-08-12

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Honda, Hironobu ,  Yamashita, Fumiaki ,  Aizawa, Junichi

IPC分类号： H03K17/687 ,  H03K17/082 ,  H03K17/06

CPC分类号： H03K17/102 ,  A61B8/4444 ,  H03K17/063 ,  H03K17/0822 ,  H03K17/6871 ,  H03K17/6874 ,  H03K2017/066 ,  H03K2217/0009 ,  H03K2217/0054

摘要： A semiconductor switch circuit (90) comprises: a first switch pair (81) including two MOSFETs(811, 812) having gates connected one another and sources connected to one another, and a zener diode (ZD1) reversely connected between the gates and sources of the MOSFETs; a second switch pair (82) including two MOSFETs (821, 822) having gates connected one another and sources connected to one another, and a zener diode (ZD2) reversely connected between the gates and sources of the MOSFETs; and a third switch pair (83) comprising two MOSFETs (831, 832); having gates connected to one another and sources connected to one another. The first switch pair (81) and the second switch pair (82) are connected in series between two input/output terminals through a connecting node. The third switch pair (83) is connected to the connecting node between the first switch pair and the second switch pair.

公开(公告)号：EP3300463A1

公开(公告)日：2018-03-28

申请号：EP17000658.9

申请日：2017-04-18

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： IKEDA, Osamu ,  KUSHIMA, Takayuki ,  OKUBO, Shinji ,  MIYAZAKI, Takaaki

IPC分类号： H05K1/02 ,  H01L23/60 ,  H01L23/31 ,  H01L23/34 ,  H01L23/24

CPC分类号： H01L23/3675 ,  H01L23/053 ,  H01L23/15 ,  H01L23/24 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/60 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/46 ,  H01L24/49 ,  H01L24/73 ,  H01L2224/26175 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29118 ,  H01L2224/29144 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/45655 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8384 ,  H01L2924/00014 ,  H01L2924/183 ,  H05K1/0254 ,  H05K1/0259 ,  H05K1/0306 ,  H05K2201/10166 ,  H01L2924/0105 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01013 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2224/05599 ,  H01L2924/00

摘要： A power module includes: a ceramic substrate that includes a principal surface and a back surface, and is provided with a plurality of metal wirings on the principal surface; a semiconductor chip mounted on any metal wiring of the plurality of metal wirings; and a resin part disposed around each of the plurality of metal wirings. Further, side faces of the metal wirings each have: a first region in which a plating film is formed; a second region that is positioned above the first region and that is a non-plating region; and a third region that is positioned between the first region and the second region and in which metal particles are formed. The resin part is bonded to the metal particles, the plating film, and the principal surface of the ceramic substrate.

摘要翻译： 一种功率模块，包括：陶瓷基板，其包括主表面和背表面，并且在所述主表面上设置有多个金属布线; 安装在所述多个金属布线的任何金属布线上的半导体芯片; 以及布置在多个金属布线中的每一个周围的树脂部分。 此外，金属布线的侧面分别具有：形成镀膜的第一区域; 位于所述第一区域上方并且是非电镀区域的第二区域; 以及位于第一区域和第二区域之间并且其中形成有金属颗粒的第三区域。 树脂部分结合到金属颗粒，镀膜和陶瓷基板的主表面。

公开(公告)号：EP2273665A3

公开(公告)日：2018-03-28

申请号：EP10006801.4

申请日：2010-07-01

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Sumita, Satoshi ,  Tobari, Kazuaki ,  Aoyagi, Shigehisa ,  Maeda, Daisuke

IPC分类号： H02P1/02 ,  H02P27/06 ,  H02P21/00 ,  H02P6/18

CPC分类号： H02P1/029 ,  F05D2260/85 ,  H02P6/182 ,  H02P25/024

摘要： If magnitude relations between the output terminal voltage based on a DC negative terminal of the inverter and a threshold voltage that is a fixed value are compared, polarity thereof is changed at a predetermined rotor phase. The magnitude relation, for example, can be detected by an inexpensive and simple apparatus such as a level shift circuit and a NOT circuit. The rotor phase of the permanent magnet synchronous motor is inferred on the basis of changes in the magnitude relation and if it is differentiated, a rotation speed can be inferred. If the inferred values of the rotor phase and rotation speed are fed back to synchronous operation or vector control, the free-running permanent magnet synchronous motor can be restarted.

摘要翻译： 如果比较基于逆变器的DC负端子的输出端子电压和作为固定值的阈值电压之间的大小关系，则其极性在预定转子相位处改变。 例如，大小关系可以通过诸如电平移位电路和非电路之类的便宜且简单的装置来检测。 根据大小关系的变化来推断永磁同步电动机的转子相位，并且如果差异化，则可以推断出转速。 如果将推断出的转子相位和转速值反馈到同步运行或矢量控制，则可以重新启动自激式永磁同步电机。

公开(公告)号：EP3038154B1

公开(公告)日：2017-11-29

申请号：EP15003635.8

申请日：2015-12-21

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Horiuchi, Keisuke ,  Kawase, Daisuke ,  Inaba, Masamitsu ,  Saito, Katsuaki

IPC分类号： H01L23/64 ,  H01L25/07 ,  H01L25/18 ,  H02M7/00 ,  H02M7/5387 ,  H02M1/00

CPC分类号： H02H7/122 ,  H01L23/053 ,  H01L23/49844 ,  H01L23/645 ,  H01L25/072 ,  H01L25/18 ,  H01L29/7393 ,  H01L2924/0002 ,  H02M7/003 ,  H02M7/5387 ,  H02M2001/0038 ,  H01L2924/00

摘要： A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.

公开(公告)号：EP3160047A2

公开(公告)日：2017-04-26

申请号：EP16194871.6

申请日：2016-10-20

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： ISHIMARU, Tetsuya ,  KURITA, Shinichi ,  TERAKAWA, Takeshi

IPC分类号： H03K17/082 ,  H03K17/687

CPC分类号： H02M1/36 ,  H02K7/006 ,  H02K11/046 ,  H02M1/08 ,  H02M7/217 ,  H02M7/219 ,  H03K17/30 ,  H03K17/302 ,  H03K2017/307 ,  H03K2217/0081

摘要： The rectifier 108 includes a rectification MOSFET 101; a comparator 102 having the non-inverted input terminal IN+ connected to a drain of the rectification MOSFET 101 and the inverted input terminal IN- connected to a source of the rectification MOSFET 101, and the control circuit 107 controlling ON and OFF of the rectification MOSFET 101 by an output of the comparator 102. The control circuit 107 includes the shutoff MOSFET 105 for performing shutoff between the drain of the rectification MOSFET 101 and the non-inverted input terminal IN+ of the comparator 102 and the shutoff control circuit 106 performing electrical shutoff between the drain of the rectification MOSFET 101 and the non-inverted input terminal IN+ of the comparator 102 by turning off the shutoff MOSFET 105 when a voltage of the drain of the rectification MOSFET 101 is equal to or higher than a first predetermined voltage.

摘要翻译： 整流器108包括整流MOSFET 101; 比较器102，具有与整流用MOSFET101的漏极连接的非反相输入端子IN +，和与整流用MOSFET101的源极连接的反相输入端子IN-，控制电路107控制整流用MOSFET101的导通截止 控制电路107包括用于在整流用MOSFET101的漏极和比较器102的非反相输入端子IN +之间进行切断的截止用MOSFET105，截止控制电路106进行电切断 在整流用MOSFET101的漏极电压为第1规定电压以上的情况下，通过使截止用MOSFET105断开，而在整流用MOSFET101的漏极与比较器102的非反转输入端子IN +之间进行切换。

公开(公告)号：EP3062341A3

公开(公告)日：2016-11-09

申请号：EP16157345.6

申请日：2016-02-25

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： FURUKAWA, Tomoyasu ,  SHIRAISHI, Masaki ,  NAKANO, Hiroshi ,  MORITA, Toshiaki

IPC分类号： H01L23/482 ,  H01L23/485 ,  H01L21/60 ,  H01L25/065 ,  H01L21/98 ,  H02M7/5387

CPC分类号： H02M7/537 ,  H01L21/283 ,  H01L21/78 ,  H01L23/4827 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/16 ,  H01L25/50 ,  H01L29/45 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/039 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/06181 ,  H01L2224/13022 ,  H01L2224/13387 ,  H01L2224/1403 ,  H01L2224/14131 ,  H01L2224/14135 ,  H01L2224/14154 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16238 ,  H01L2224/29147 ,  H01L2224/29387 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/81447 ,  H01L2224/8184 ,  H01L2224/83065 ,  H01L2224/83203 ,  H01L2224/83447 ,  H01L2224/8384 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/01013 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/3511 ,  H02M7/003 ,  H01L2924/00014 ,  H01L2924/01014 ,  H01L2224/03 ,  H01L2924/0541 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2224/1413 ,  H01L2224/1415 ,  H01L2224/03464 ,  H01L21/304 ,  H01L21/22

摘要： A semiconductor device (200, 300, 400) includes a semiconductor substrate (108, 208) in which a semiconductor element (150) is formed, an electrode structure (151, 202, 207) provided on a first surface (108d) of the semiconductor substrate (108, 208) to be electrically connected to the semiconductor element (150) and in which a first Al metal layer (105) composed of Al or Al alloy, a Cu diffusion-prevention layer (107) composed of e.g. Ti, TiN, TiW or W, a second Al metal layer (106) composed of Al or Al alloy and a Ni, Cu or Cu alloy layer (104) are formed in this order, and a conductive member (102) which is bonded to the electrode structure (151, 202, 207) via a sintered copper layer (103) disposed on a surface (104a) of the Ni, Cu or Cu alloy layer (104). In this semiconductor device, a crystal plane orientation of Al crystal grains on a surface (106a) of the second Al metal layer (106) is principally on the (110) plane. The semiconductor device (200) may comprise a second electrode structure (152) on the second surface (108e) of the semiconductor substrate (108), also formed of the layers (105), (107), (106) and (104) and bonded to a conductive member (102) via a sintered copper layer (103). Alternatively, the semiconductor device (300, 400) may comprise a plurality of semiconductor elements such as transistors, diodes and resistive elements formed on a semiconductor LSI chip (201, 205, 206) and a plurality of input/output electrode pads (202, 207) each formed of the layers (105), (107), (106) and (104). The LSI chip (201, 205, 206) may be bonded to another semiconductor LSI chip (205, 206), also having electrode pads (202, 207) formed of the layers (105), (107), (106) and (104), and/or to a conductive member (102) via a sintered copper layer (103).

公开(公告)号：EP3038154A2

公开(公告)日：2016-06-29

申请号：EP15003635.8

申请日：2015-12-21

申请人： Hitachi Power Semiconductor Device, Ltd.

发明人： Horiuchi, Keisuke ,  Kawase, Daisuke ,  Inaba, Masamitsu ,  Saito, Katsuaki

IPC分类号： H01L23/64 ,  H01L25/07

CPC分类号： H02H7/122 ,  H01L23/053 ,  H01L23/49844 ,  H01L23/645 ,  H01L25/072 ,  H01L25/18 ,  H01L29/7393 ,  H01L2924/0002 ,  H02M7/003 ,  H02M7/5387 ,  H02M2001/0038 ,  H01L2924/00

摘要： A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.

摘要翻译： 提供了一种能够抑制从主终端给控制终端的噪声的影响的半导体功率模块。 主端子（正极端子，负极端子，交流端子）中的至少任一个被构造成使得主端子包括沿共同方向延伸的两个部分。 这两个部分例如由单一部件形成，该部件具有从外部朝向半导体功率模块的内部分叉的部件或两个不同部件的形状。 这两个部分是如此的结构，使得部件沿共同的方向延伸。 控制端子（栅极信号端子和发射极信号端子）被布置成使得控制端子的层叠部分被夹在两个部分中的一个和另一个之间以配置半导体功率模块。