Provided are compounds of the formula MA1-xMBxXA1-yXByQA1-zQBz, wherein MA and MB are selected from Si, Ge, Sn, and Pb, XA and XB are selected from F, Cl, Br and I, QA and QB are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.