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公开(公告)号:EP3319903B1
公开(公告)日:2020-03-11
申请号:EP16734571.9
申请日:2016-06-14
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公开(公告)号:EP3319903A1
公开(公告)日:2018-05-16
申请号:EP16734571.9
申请日:2016-06-14
发明人: NILGES, Tom , PFISTER, Daniela , OTT, Claudia , SCHÄFER, Konrad , BAUMGARTNER, Maximilian , WEIHRICH, Richard
CPC分类号: C01G28/004 , B01J19/12 , B01J27/135 , B01J27/14 , B01J35/0013 , B01J35/004 , B01J37/04 , B01J2219/0892 , C01B25/08 , C01B25/088 , C01B25/10 , C01G28/002 , C01G29/006 , C01G30/002 , C01P2002/30 , C01P2002/72 , C01P2002/77 , C01P2002/80 , C01P2002/82 , C01P2002/86 , C01P2002/88 , C01P2004/03 , C01P2004/16 , C01P2006/40 , H01L35/26 , H01L51/4266
摘要: Provided are compounds of the formula MA1-xMBxXA1-yXByQA1-zQBz, wherein MA and MB are selected from Si, Ge, Sn, and Pb, XA and XB are selected from F, Cl, Br and I, QA and QB are selected from P, As, Sb and Bi, and x, y and z are 0 to 0.5, as well as doped variants thereof, useful as semiconducting materials. Due a double helix structure formed by the constituting atoms, the compounds are particularly suitable to provide nano-materials, in particular nanowires, for diverse applications.
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