发明公开
- 专利标题: PSEUDO DUAL PORT MEMORY
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申请号: EP16754650.6申请日: 2016-08-16
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公开(公告)号: EP3350716A1公开(公告)日: 2018-07-25
- 发明人: KWOK, Tony Chung Yiu , DESAI, Nishith Nitin , JUNG, Changho
- 申请人: Qualcomm Incorporated
- 申请人地址: 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人: Qualcomm Incorporated
- 当前专利权人: Qualcomm Incorporated
- 当前专利权人地址: 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构: Tomkins & Co
- 优先权: US201514855319 20150915
- 国际公布: WO2017048440 20170323
- 主分类号: G06F13/16
- IPC分类号: G06F13/16 ; G11C7/22
摘要:
Aspects of a memory and method for accessing the memory are disclosed. The memory includes a plurality of memory cells configured to support a read and write operation in a memory cycle in a first mode and a write only operation in the memory cycle in a second mode. The memory further includes a control circuit configured to generate a read clock for the read operation and a write clock for the write operation. The timing of the write clock is a function of the timing of the read clock in the first mode, and the timing of the memory cycle in the second mode.
公开/授权文献
- EP3350716B1 PSEUDO DUAL PORT MEMORY 公开/授权日:2020-08-12
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