- 专利标题： STATIC RANDOM ACCESS MEMORY WITH IMPROVED WRITE TIME AND REDUCED WRITE POWER
-
申请号： EP16825951.3申请日： 2016-12-16
-
公开(公告)号： EP3405954A1公开(公告)日： 2018-11-28
- 发明人: GUPTA, Sharad Kumar , NARASIMHAN, Mukund , BODA, Veerabhadra Rao
- 申请人： Qualcomm Incorporated
- 申请人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 专利权人： Qualcomm Incorporated
- 当前专利权人： Qualcomm Incorporated
- 当前专利权人地址： 5775 Morehouse Drive San Diego, CA 92121-1714 US
- 代理机构： Emde, Eric
- 优先权： US201615003444 20160121
- 国际公布： WO2017127193 20170727
- 主分类号： G11C11/418
- IPC分类号： G11C11/418 ; G11C8/18 ; G11C8/10 ; G11C8/08 ; G11C7/22
摘要：
A memory is provided in which the word line assertion during a write operation is delayed until the discharge of a dummy bit line is detected.
公开/授权文献
信息查询
IPC分类:
