CHEMICAL MECHANICAL PLANARIZATION USING NANODIAMOND
摘要:
A method for chemical mechanical polishing of a substrate includes polishing the substrate at a stock removal rate of greater than about 2.5 Å/min to achieve a Ra of not greater than about 5.0 Å. The substrate can be a III-V substrate or a SiC substrate. The polishing utilizes a chemical mechanical polishing slurry comprising ultra-dispersed diamonds and at least 80 wt% water.
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