- 专利标题： HIGH WITHSTAND VOLTAGE SCHOTTKY BARRIER DIODE
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申请号： EP21187580.2申请日： 2016-03-09
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公开(公告)号： EP3933935A1公开(公告)日： 2022-01-05
- 发明人: SASAKI, Kohei , GOTO, Ken , HIGASHIWAKI, Masataka , KOUKITU, Akinori , KUMAGAI, Yoshinao , MURAKAMI, Hisashi
- 申请人： Tamura Corporation , National Institute of Information and Communications Technology , National University Corporation Tokyo University Of Agriculture and Technology
- 申请人地址： JP Tokyo 178-8511 1-19-43 Higashi-Oizumi Nerima-ku; JP Koganei-shi, Tokyo 184-8795 4-2-1, Nukui-Kitamachi,; JP Fuchu-shi Tokyo 183-8538 3-8-1 Harumi-cho
- 代理机构： Betten & Resch
- 优先权： JP2015058519 20150320
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L21/329 ; H01L29/24 ; C23C16/40 ; C30B29/16 ; H01L21/02 ; H01L29/47
摘要：
[Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.
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