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    CRYSTAL LAMINATE STRUCTURE
    5.
    发明公开
    CRYSTAL LAMINATE STRUCTURE 审中-公开
    水晶层压结构

    公开(公告)号：EP3272915A1

    公开(公告)日：2018-01-24

    申请号：EP16768238.4

    申请日：2016-02-17

    申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

    发明人： GOTO, Ken ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

    IPC分类号： C30B29/16 ,  C23C16/40 ,  C30B25/20 ,  H01L21/205

    CPC分类号： C30B29/16 ,  C23C16/40 ,  C30B25/20 ,  C30B29/68 ,  C30B31/08 ,  H01L21/205

    摘要： [Problem] To provide a crystal laminate structure having a β-Ga 2 O 3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga 2 O 3 based substrate 10; and a β-Ga 2 O 3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga 2 O 3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1 × 10 13 to 5.0 × 10 20 atoms/cm 3 .

    摘要翻译： [问题]提供一种具有β-Ga 2 O 3系单晶膜的结晶层叠结构，其中在整个晶体中包含掺杂剂并且掺杂剂的浓度可以在宽范围内设定。 解决方案在本发明的一个实施例中，提供了一种晶体层压结构1，其包括：基于Ga 2 O 3的基板10; 以及在Ga 2 O 3系基板10的主面11上通过外延生长而形成的β-Ga 2 O 3系单晶膜12，其包含Cl和以1×10 13〜5.0×10 20的浓度与晶体生长平行地掺杂的掺杂剂 原子/ cm 3。

    NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD, AND MANUFACTURING APPARATUS
    6.
    发明公开
    NITRIDE SEMICONDUCTOR CRYSTAL, MANUFACTURING METHOD, AND MANUFACTURING APPARATUS 审中-公开
    NITRIDHALBLEITERKRISTALL，HERSTELLUNGSVERFAHREN UND HERSTELLUNGSVORRICHTUNG

    公开(公告)号：EP3059336A1

    公开(公告)日：2016-08-24

    申请号：EP14843243.8

    申请日：2014-09-10

    申请人： National University Corporation Tokyo University Of Agriculture and Technology

    发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

    IPC分类号： C30B29/38

    CPC分类号： C30B25/14 ,  C30B25/00 ,  C30B25/02 ,  C30B25/08 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262

    摘要： A nitride semiconductor crystal has a diameter of four inches or more and is warped to have a curvature radius of 100 m or more, and has an impurity concentration of 1 × 10 17 /cm 3 or lower. A manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding a gallium trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing a GaN crystal in the -C-axis direction on the substrate, where a growth temperature for the GaN crystal is 1200°C or higher, or a manufacturing method for a nitride semiconductor crystal includes providing a substrate, feeding an aluminum trihalide gas having a partial pressure of 9.0 × 10 -3 atm or higher onto the substrate, and growing an AlN crystal in the -C-axis direction on the substrate, where a growth temperature for the AlN crystal is 1400°C or higher.

    摘要翻译： 氮化物半导体晶体的直径为4英寸以上，翘曲为曲率半径为100μm以上，杂质浓度为1×10 17 / cm 3以下。 一种氮化物半导体晶体的制造方法，其特征在于，在基板上设置基板，将分压为9.0×10 -3 atm以上的三卤化镓气体供给到基板上，在基板上沿-C轴方向生长GaN晶体 其中GaN晶体的生长温度为1200℃以上，或者氮化物半导体晶体的制造方法包括提供基板，将分压为9.0×10 -3 atm以上的三卤化铝气体供给到 衬底，并且在衬底上在-C轴方向上生长AlN晶体，其中AlN晶体的生长温度为1400℃或更高。

    N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR PRODUCING THE SAME
    7.
    发明公开
    N-TYPE CONDUCTIVE ALUMINUM NITRIDE SEMICONDUCTOR CRYSTAL AND METHOD FOR PRODUCING THE SAME 审中-公开
    LEITFÄHIGERALUMINIUMNITRIDHALBLEITERKRISTALL VOM N-TYP UND HERSTELLUNGSVERFAHRENDAFÜR

    公开(公告)号：EP2123802A1

    公开(公告)日：2009-11-25

    申请号：EP08711084.7

    申请日：2008-02-05

    申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

    发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  NAGASHIMA, Toru ,  TAKADA, Kazuya ,  YANAGI, Hiroyuki

    IPC分类号： C30B29/38 ,  C23C16/01 ,  C23C16/34 ,  C30B25/18 ,  H01L21/205 ,  H01L33/00

    CPC分类号： C30B25/02 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/007

    摘要： This invention provides a selfsupporting substrate which consists of a n-type conductive aluminum nitride semiconductor crystal and is useful for manufacturing the vertical conductive type AlN semiconductor device.
    The n-type conductive aluminum nitride semiconductor crystal, by which the selfsupporting substrate is made up, contains Si atom at a concentration of 1×10 18 to 5×10 20 cm -3 , is substantially free from halogen atoms, and substantially does not absorb the light having the energy of not more than 5.9 eV. The selfsupporting substrate can be obtained by a method comprising the steps of forming an AlN crystal layer on a single crystal substrate such as a sapphire by the HVPE method, preheating the obtained substrate having the AlN crystal layer to a temperature of 1,200°C or more, forming a second layer consisting of the n-type conductive aluminum nitride semiconductor crystal is formed on the AlN crystal layer in high rate by the HVPE method and separating the second layer from the obtained laminate.

    摘要翻译： 本发明提供一种由n型导电氮化铝半导体晶体组成的自支撑衬底，并且可用于制造垂直导电型AlN半导体器件。 构成自支撑衬底的n型导电氮化铝半导体晶体含有浓度为1×10 18至5×10 20 cm -3的Si原子，基本上不含卤素原子，并且基本上不 吸收能量不超过5.9 eV的光。 可以通过包括以下步骤的方法获得自支撑衬底：通过HVPE法在诸如蓝宝石的单晶衬底上形成AlN晶体层的步骤，将获得的具有AlN晶体层的衬底预热至1200℃或更高的温度 通过HVPE法在AlN晶体层上高速率地形成由n型导电氮化铝半导体晶体构成的第二层，并将第二层从得到的层压体分离。

    LAMINATE AND PROCESS FOR PRODUCING THE LAMINATE
    9.
    发明公开
    LAMINATE AND PROCESS FOR PRODUCING THE LAMINATE 审中-公开
    LAMINAT UND VERFAHREN ZUR HERSTELLUNG DES LAMINATS

    公开(公告)号：EP2243868A1

    公开(公告)日：2010-10-27

    申请号：EP09702588.6

    申请日：2009-01-09

    申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

    发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  ISHIZUKI, Masanari ,  NAGASHIMA, Toru ,  HAKOMORI, Akira ,  TAKADA, Kazuya

    IPC分类号： C30B29/38 ,  C30B25/18

    CPC分类号： C30B25/18 ,  C30B25/183 ,  C30B29/403

    摘要： The present invention provides a self-supporting substrate obtained by the steps of: forming an Al-based group-III nitride thin-layer having a thickness in the range of 3-200 nm on a base substrate made of a single crystal of an inorganic substance which substantially does not decompose at 800 °C in an inert gas atmosphere and which does produce volatiles by decomposition when contacting with a reducing gas in a temperature range of 800-1600 °C, for example sapphire; forming voids along the interface between the base substrate and the Al-based group-III nitride thin-layer of the obtained laminated substrate by thermally treating the laminated substrate in a temperature range of 800-1600 °C in a reducing gas atmosphere containing ammonia gas; forming a group-III nitride single crystal thick-layer on the Al-based group-III nitride thin-layer; and separating these formed layers. The self-supporting substrate is a self-supporting substrate of the group-III nitride single crystal such as AlN, which is suitably used for forming a semiconductor device such as ultraviolet light emitting device and of which crystal plane shows a large radius of curvature.

    摘要翻译： 本发明提供一种自支撑基板，其通过以下步骤获得：在由无机的单晶制成的基底上形成厚度在3〜200nm范围内的Al系III族氮化物薄层 在800℃，在惰性气体气氛中基本上不分解的物质，当与800-1600℃的温度范围内的还原气体接触时会分解产生挥发物，例如蓝宝石; 通过在800-1600℃的温度范围内，在含有氨气体的还原性气体气氛中对叠层基板进行热处理，沿着基底基板和Al基III族氮化物薄层之间的界面形成空隙 ; 在Al系III族氮化物薄层上形成III族氮化物单晶厚层; 并分离这些形成的层。 自支撑衬底是诸如AlN的III族氮化物单晶的自支撑衬底，其适合用于形成诸如紫外光发射器件的半导体器件，并且其晶面显示出大的曲率半径。

    PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL
    10.
    发明公开
    PROCESS FOR PRODUCING GROUP III NITRIDE CRYSTAL 审中-公开
    VERFAHREN ZUR HERSTELLUNG EINES GRUPPE-III-NITRID-KRISTALLS

    公开(公告)号：EP2141267A1

    公开(公告)日：2010-01-06

    申请号：EP08721312.0

    申请日：2008-02-27

    申请人： National University Corporation Tokyo University of Agriculture and Technology ,  Tokuyama Corporation

    发明人： KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  NAGASHIMA, Toru ,  TAKADA, Kazuya ,  YANAGI, Hiroyuki

    IPC分类号： C30B29/38 ,  C30B25/10

    CPC分类号： C30B29/403 ,  C30B25/10 ,  C30B25/18

    摘要： There is provided a method capable of obtaining an aluminum-based group III nitride crystal layer having a smooth surface and high crystallinity by employing only HVPE in which inexpensive raw materials can be used to reduce production costs and high-speed film formation is possible without employing MOVPE.
    To produce a group III nitride crystal by HVPE comprising the step of growing a group III nitride crystal layer by vapor-phase growth on a single crystal substrate by contacting the heated single crystal substrate with a raw material gas containing a group III halide and a compound having a nitrogen atom, the group III nitride crystal is grown by vapor-phase growth on the single crystal substrate heated at a temperature of 1,000°C or more and less than 1,200°C to form an intermediate layer and then, a group III nitride crystal is further grown by vapor-phase growth on the intermediate layer on the substrate heated at a temperature of 1,200°C or higher.

    摘要翻译： 提供了一种能够通过仅使用廉价的原材料用于降低生产成本的HVPE来获得具有光滑表面和高结晶度的铝基III族氮化物晶体层的方法，并且可以在不使用高速成膜的情况下进行高速成膜 MOVPE。 为了通过HVPE制造III族氮化物晶体，包括通过使加热的单晶衬底与含有III族卤化物和化合物的原料气体接触，在单晶衬底上通过气相生长生长III族氮化物晶体层的步骤 具有氮原子的情况下，在1000℃以上且小于1200℃的温度加热的单晶衬底上通过气相生长生长III族氮化物晶体，形成中间层，然后加入III族氮化物 通过在1200℃以上的温度下加热的基板上的中间层上的气相生长进一步生长晶体。