公开(公告)号：EP3933935A1

公开(公告)日：2022-01-05

申请号：EP21187580.2

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L29/24 ,  C23C16/40 ,  C30B29/16 ,  H01L21/02 ,  H01L29/47

摘要： [Problem] To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

公开(公告)号：EP3054037A1

公开(公告)日：2016-08-10

申请号：EP14849461.0

申请日：2014-09-18

申请人： Tamura Corporation ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： GOTO, Ken ,  SASAKI, Kohei ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： C30B29/16 ,  C23C16/40 ,  C23C16/448 ,  C30B25/14 ,  H01L21/365

CPC分类号： C30B25/165 ,  C23C16/40 ,  C23C16/4488 ,  C30B25/02 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/02598 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/04 ,  H01L29/24

摘要： Provided are: a method for efficiently growing a high-quality, large diameter β-Ga 2 O 3 -based single crystal film; and a crystalline layered structure having a β-Ga 2 O 3 -based single crystal film grown using this growing method. As one embodiment, the present invention provides a method for growing a β-Ga 2 O 3 -based single crystal film by using the HVPE method, and including a step for exposing a Ga 2 O 3 -based substrate (10) to a gallium chloride gas and an oxygen-containing gas, and growing a β-Ga 2 O 3 -based single crystal film (12) on the principal surface (11) of the Ga 2 O 3 -based substrate (10) at a growing temperature of 900° C or higher.

摘要翻译： 本发明提供：用于有效地生长高质量的方法，大直径²-的Ga 2 O 3系单晶膜; 和具有使用该生长方法生长的²-的Ga 2 O 3系单晶膜的结晶层状结构。 作为一个实施例，本发明提供了一种方法，用于通过利用HVPE法生长²-的Ga 2 O 3系单晶的电影，并且包括用于曝光的Ga 2 O 3系基材（10），以镓的工序 氯化物气体和基底物在生长温度气体，和Ga的2 O 3（10）的主表面（11）上生长²-的Ga 2 O 3系单晶膜（12）的含氧 900℃或更高。

公开(公告)号：EP3273487A1

公开(公告)日：2018-01-24

申请号：EP16768439.8

申请日：2016-03-09

申请人： Tamura Corporation ,  National Institute of Information and Communication Technology ,  National University Corporation Tokyo University Of Agriculture and Technology

发明人： SASAKI, Kohei ,  GOTO, Ken ,  HIGASHIWAKI, Masataka ,  KOUKITU, Akinori ,  KUMAGAI, Yoshinao ,  MURAKAMI, Hisashi

IPC分类号： H01L29/872 ,  C23C16/40 ,  C30B29/16 ,  H01L21/329 ,  H01L29/24 ,  H01L29/47

CPC分类号： H01L29/872 ,  C23C16/40 ,  C23C16/4488 ,  C30B15/34 ,  C30B23/02 ,  C30B25/20 ,  C30B29/16 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02634 ,  H01L29/24 ,  H01L29/47 ,  H01L29/66969

摘要： [Problem]
To provide a Ga 2 O 3 -based high withstand voltage Schottky barrier diode having excellent withstand voltage characteristics. [Solution] According to one embodiment of the present invention, provided is a high withstand voltage Schottky barrier diode 1 having: a first layer 10, which is formed of a first Ga 2 O 3 -based single crystal containing a first Group IV element, and Cl at a concentration equal to or lower than 5×10 16 cm -3 , and which has an effective donor concentration not lower than 1×10 13 but not higher than 6.0×10 17 cm -3 ; a second layer 12, which is formed of a second Ga 2 O 3 -based single crystal containing a second Group IV element, and which has an effective donor concentration that is higher than that of the first layer 10, said second layer being laminated on the first layer 10; an anode electrode 14 formed on the first layer 10; and a cathode electrode 15 formed on the second layer 12.

摘要翻译： [问题]提供具有优异的耐电压特性的Ga 2 O 3基高耐压肖特基势垒二极管。 根据本发明的一个实施例，提供了一种高耐压肖特基势垒二极管1，其具有：第一层10，其由包含第一IV族元素的第一Ga 2 O 3基单晶形成， 等于或低于5×1016cm-3的浓度，并且具有不小于1×1013但不大于6.0×1017cm-3的有效施主浓度; 第二层12，其由包含第二IV族元素的第二基于Ga 2 O 3的单晶形成，并且具有比第一层10更高的有效施主浓度，所述第二层被层压在第一层上 10; 形成在第一层10上的阳极电极14; 和形成在第二层12上的阴极电极15。

公开(公告)号：EP3629379A1

公开(公告)日：2020-04-01

申请号：EP18790539.3

申请日：2018-04-26

申请人： National Institute of Information and Communications Technology ,  Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： HIGASHIWAKI, Masataka ,  NAKATA, Yoshiaki ,  KAMIMURA, Takafumi ,  WONG, Man Hoi ,  SASAKI, Kohei ,  WAKIMOTO, Daiki

IPC分类号： H01L29/24 ,  C30B23/08 ,  C30B29/16 ,  H01L21/336 ,  H01L21/338 ,  H01L29/12 ,  H01L29/423 ,  H01L29/47 ,  H01L29/49 ,  H01L29/78 ,  H01L29/812 ,  H01L29/872

摘要： As an embodiment, provided is a Ga 2 O 3 -based semiconductor device 1a that has: a second Ga 2 O 3 -based crystal layer 11 containing a donor; and an N-doped region formed in the entire second Ga 2 O 3 -based crystal layer 11.

公开(公告)号：EP3151285A1

公开(公告)日：2017-04-05

申请号：EP16198900.9

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/786 ,  H01L29/812 ,  H01L21/336 ,  H01L21/338 ,  H01L29/24 ,  H01L29/36 ,  H01L29/15 ,  H01L21/20 ,  H01L29/04

CPC分类号： H01L29/7869 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/045 ,  H01L29/157 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/772 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/78603 ,  H01L29/812 ,  H01L29/8126

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is a Ga 2 O 3 MESFET (30), which includes: an n-type β-Ga 2 O 3 single crystal film (3), which is formed on a high-resistance β-Ga 2 O 3 substrate (2) directly or with other layer therebetween; a source electrode (32) and a drain electrode (33), which are formed on the n-type β-Ga 2 O 3 single crystal film (3); and a gate electrode (31), which is formed on the n-type β-Ga 2 O 3 single crystal film (3) between the source electrode (32) and the drain electrode (33).

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 提供了一种Ga 2 O 3 MESFET（30），其包括：形成在高电阻²-Ga 2 O 3衬底（2）上的n型Λ-Ga 2 O 3单晶膜（3） 直接或与其间的其它层; 源极电极（32）和漏电极（33），其形成在n型²-Ga 2 O 3单晶膜（3）上; 以及形成在源电极（32）和漏电极（33）之间的n型²-Ga 2 O 3单晶膜（3）上的栅电极（31）。

公开(公告)号：EP2765610B1

公开(公告)日：2018-12-26

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/78 ,  H01L29/24 ,  H01L21/20 ,  H01L29/04 ,  H01L29/36 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type ²-Ga 2 O 3 substrate (2); a ²-Ga 2 O 3 single crystal film (3), which is formed on the n-type ²-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the ²-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type ²-Ga 2 O 3 substrate (2) surface on the reverse side of the ²-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the ²-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the ²-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

公开(公告)号：EP2765610A1

公开(公告)日：2014-08-13

申请号：EP12830340.1

申请日：2012-09-07

申请人： Tamura Corporation ,  National Institute of Information and Communications Technology

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/12 ,  H01L21/20 ,  H01L21/28 ,  H01L21/336 ,  H01L21/363 ,  H01L29/24 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L21/02414 ,  H01L21/02433 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02634 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/365 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7813 ,  H01L29/7827

摘要： Provided is a high-quality Ga 2 O 3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga 2 O 3 semiconductor element (20), which includes: an n-type β-Ga 2 O 3 substrate (2); a β-Ga 2 O 3 single crystal film (3), which is formed on the n-type β-Ga 2 O 3 substrate (2); source electrodes (22a, 22b), which are formed on the β-Ga 2 O 3 single crystal film (3); a drain electrode (25), which is formed on the n-type β-Ga 2 O 3 substrate (2) surface on the reverse side of the β-Ga 2 O 3 single crystal film (3); n-type contact regions (23a, 23b), which are formed in the β-Ga 2 O 3 single crystal film (3), and have the source electrodes (22a, 22b) connected thereto, respectively; and a gate electrode (21), which is formed on the β-Ga 2 O 3 single crystal film (3) with the gate insulating film (26) therebetween.

摘要翻译： 提供了高质量的Ga 2 O 3半导体元件。 作为本发明的一个实施方式，提供了包含n型²Ga 2 O 3基板（2）的Ga 2 O 3半导体元件（20）。 形成在n型2 Ga 2 O 3基板（2）上的2-Ga 2 O 3单晶膜（3）; 源极电极（22a，22b），其形成在2-Ga 2 O 3单晶膜（3）上; 形成在2-Ga 2 O 3单晶膜（3）的背面的n型²Ga 2 O 3衬底（2）表面上的漏极（25）; n型接触区域（23a，23b）分别形成在2 Ga 2 O 3单晶膜（3）中，并分别连接有源电极（22a，22b） 和形成在其上的栅极绝缘膜（26）的2 Ga 2 O 3单晶膜（3）上的栅电极（21）。

公开(公告)号：EP3761374A1

公开(公告)日：2021-01-06

申请号：EP19761259.1

申请日：2019-02-25

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc. ,  TDK Corporation

发明人： SASAKI, Kohei ,  FUJITA, Minoru ,  HIRABAYASHI, Jun ,  ARIMA, Jun

IPC分类号： H01L29/872 ,  C30B29/16 ,  C30B33/08 ,  H01L21/329 ,  H01L29/41 ,  H01L29/47 ,  H01L29/861 ,  H01L29/868 ,  H01L29/94

摘要： Provided is a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 that is formed from a Ga 3 O 3 single crystal; a second semiconductor layer 11 that is formed from a Ga 3 O 3 single crystal and has a trench 12; an anode electrode 13; a cathode electrode 14; an insulating film 15; and a trench electrode 16. This trench MOS Schottky diode 1 is configured such that the second semiconductor layer 11 has an insulating dry etching damaged layer 11a, which has a thickness of 0.8 µm or less, in a region that includes the inner surface of the trench 12.

公开(公告)号：EP3588580A1

公开(公告)日：2020-01-01

申请号：EP18757087.4

申请日：2018-02-27

申请人： Tamura Corporation ,  Novel Crystal Technology, Inc.

发明人： SASAKI, Kohei ,  HIGASHIWAKI, Masataka

IPC分类号： H01L29/872 ,  H01L29/06 ,  H01L29/20 ,  H01L29/47

摘要： One embodiment of the present invention provides a trench MOS Schottky diode 1 which is provided with: a first semiconductor layer 10 which is formed from a Ga 2 O 3 single crystal; a second semiconductor layer 11 which is laminated on the first semiconductor layer 10 and has a trench 12 that opens to a surface 17, while being formed from a Ga 2 O 3 single crystal; an anode electrode 13 which is formed on the surface 17; a cathode electrode 14 which is formed on a surface of the first semiconductor layer 10, said surface being on the reverse side of the second semiconductor layer 11-side surface; an insulating film 15 which covers the inner surface of the trench 12 of the second semiconductor layer 11; and a trench MOS gate 16 which is buried within the trench 12 of the second semiconductor layer 11 so as to be covered by the insulating film 15, while being in contact with the anode electrode 13. The second semiconductor layer 11 is configured from: a lower layer 11b which is on the first semiconductor layer side; and an upper layer 11a which is on the anode electrode 13 side, while having a higher donor concentration than the lower layer 11b.

公开(公告)号：EP2755231B1

公开(公告)日：2019-05-22

申请号：EP12829259.6

申请日：2012-08-02

申请人： Tamura Corporation

发明人： SASAKI, Kohei

IPC分类号： H01L21/425 ,  H01L29/24