- 专利标题： MULTILAYER MASKING LAYER AND METHOD OF FORMING SAME
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申请号： EP21185762.8申请日： 2021-07-15
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公开(公告)号： EP3940762A1公开(公告)日： 2022-01-19
- 发明人: CHEN, Wen-Ju , KO, Chung-Ting , CHANG, Ya-Lan , CHEN, Ting-Gang , HUANG, Tai-Chun , CHUI, Chi On
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu No. 8 Li-Hsin Road 6, Hsinchu Science Park,
- 代理机构： Valea AB
- 优先权： US202117198133 20210310
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/66 ; H01L21/02
摘要：
A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first-type masking layer over the semiconductor layer; etching the first-type masking layer to expose the semiconductor layer; forming a first semiconductor material in the first recess; and removing the first-type masking layer. Forming the first-type masking layer comprises forming a first masking layer over the semiconductor layer, and forming a second masking layer, wherein after forming the second masking layer, the second masking layer is located over a portion of the first masking layer.
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