公开(公告)号：EP3940762A1

公开(公告)日：2022-01-19

申请号：EP21185762.8

申请日：2021-07-15

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： CHEN, Wen-Ju ,  KO, Chung-Ting ,  CHANG, Ya-Lan ,  CHEN, Ting-Gang ,  HUANG, Tai-Chun ,  CHUI, Chi On

IPC分类号： H01L21/8238 ,  H01L29/66 ,  H01L21/02

摘要： A method includes forming a semiconductor layer over a substrate; etching a portion of the semiconductor layer to form a first recess and a second recess; forming a first-type masking layer over the semiconductor layer; etching the first-type masking layer to expose the semiconductor layer; forming a first semiconductor material in the first recess; and removing the first-type masking layer. Forming the first-type masking layer comprises forming a first masking layer over the semiconductor layer, and forming a second masking layer, wherein after forming the second masking layer, the second masking layer is located over a portion of the first masking layer.