- 专利标题: PIEZOELECTRIC THIN-FILM MICROELECTROMECHANICAL STRUCTURE HAVING IMPROVED ELECTRICAL CHARACTERISTICS AND CORRESPONDING MANUFACTURING PROCESS
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申请号: EP21199247.4申请日: 2021-09-27
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公开(公告)号: EP3975273A1公开(公告)日: 2022-03-30
- 发明人: GIUSTI, Domenico , MARTINI, Irene , ASSANELLI, Davide , FERRARINI, Paolo , PRELINI, Carlo Luigi , QUAGLIA, Fabio
- 申请人: STMicroelectronics S.r.l.
- 申请人地址: IT 20864 Agrate Brianza (MB) Via C. Olivetti, 2
- 代理机构: Nannucci, Lorenzo
- 优先权: IT202000022813 20200928
- 主分类号: H01L41/08
- IPC分类号: H01L41/08 ; H01L41/09 ; H01L41/319 ; B06B1/06
摘要:
A piezoelectric microelectromechanical structure (10), provided with a piezoelectric layer structure (11) having a main extension in a horizontal plane (xy) and a variable cross-section in a plane (xz) transverse to the horizontal plane, comprises a bottom electrode (12), a piezoelectric material (14) constituted by a PZT film arranged on the bottom electrode, and a top electrode (16) arranged on the piezoelectric material, wherein the piezoelectric material has a first thickness (w1) along a vertical axis (z) at a first area (14') and a second thickness (w2) along the vertical axis (z) at a second area (14"), the second thickness being smaller than the first thickness. A corresponding manufacturing process is also disclosed.
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