- 专利标题: CADMIUM TELLURIDE SOLAR CELL AND PREPARATION METHOD THEREOF
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申请号: EP20863852.8申请日: 2020-09-14
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公开(公告)号: EP4030491A1公开(公告)日: 2022-07-20
- 发明人: PENG, Shou , CHEN, Ying , YIN, Xinjian , ZHOU, Xianhua
- 申请人: China Triumph International Engineering Co., Ltd.
- 申请人地址: CN Shanghai 200063 27F, No. 2000, Zhongqi Building North Zhongshan Road Putuo District
- 代理机构: Kailuweit & Uhlemann Patentanwälte Partnerschaft mbB
- 优先权: CN201910865180 20190912
- 国际公布: WO2021047673 20210318
- 主分类号: H01L31/0296
- IPC分类号: H01L31/0296
摘要:
The present disclosure provides a cadmium telluride solar cell and a preparation method thereof. The method includes: providing a substrate, and forming a window layer on a first surface of the substrate, wherein the window layer is made of magnesium-doped zinc oxide; forming a light absorbing layer on a surface of the window layer, wherein the light absorbing layer includes a composite layer of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride; and forming a back electrode layer on a surface of the light absorbing layer. The use of the composite structure of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride allows the solar cell to absorb long-wavelength and short-wavelength light to the maximum, increases the short-circuit current density of the cell, and improves the efficiency of the cell. In addition, the window layer including magnesium-doped zinc oxide of the solar cell serves as a buffer layer to reduce the recombination of charge carriers between interfaces. Finally, the composite layer of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride that has a selenium-doped gradient can effectively prevent the diffusion of copper ions to the window layer of magnesium-doped zinc oxide, and reduce the formation of deep-level defects, thereby improving the initial performance and long-term stability of the solar cell.
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