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    METHOD FOR ACTIVATING ABSORPTION LAYER OF THIN-FILM SOLAR CELL
    1.
    发明公开
    METHOD FOR ACTIVATING ABSORPTION LAYER OF THIN-FILM SOLAR CELL 审中-实审 转让

    公开(公告)号：EP4369423A1

    公开(公告)日：2024-05-15

    申请号：EP22897093.5

    申请日：2022-06-10

    申请人： China Triumph International Engineering Co., Ltd. ,  CTF Solar GmbH

    发明人： PENG, Shou ,  FU, Ganhua ,  MA, Liyun ,  YIN, Xinjian ,  DROST, Christian

    IPC分类号： H01L31/18

    CPC分类号： H01L31/18

    摘要： The present invention relates to a method for activating an absorption layer of a semifinished thin-film solar cell. The absorption layer comprises CdSexTe1-x, CdSe, CdS or CdTe. The method for activating an absorption layer of a semi-finished thin-film solar cell comprises the following steps: providing a semi-finished thin-film solar cell, which has an absorption layer comprising a CdSexTe1-x layer or comprising at least two layers selected from CdS, CdTe, ZnTe and CdSe; forming a polyvinyl chloride film on the surface of the absorption layer; and carrying out a heat treatment on the semi-finished thin-film solar cell having the polyvinyl chloride film on the surface thereof, wherein the temperature of the heat treatment is between 300°C and 500°C.

    HIGH-EFFICIENCY CADMIUM TELLURIDE THIN-FILM SOLAR CELL AND PREPARATION METHOD THEREFOR
    3.
    发明公开
    HIGH-EFFICIENCY CADMIUM TELLURIDE THIN-FILM SOLAR CELL AND PREPARATION METHOD THEREFOR 审中-公开

    公开(公告)号：EP4163983A1

    公开(公告)日：2023-04-12

    申请号：EP20939025.1

    申请日：2020-09-28

    申请人： China Triumph International Engineering Co., Ltd.

    发明人： PENG, Shou ,  CHEN, Ying ,  YIN, Xinjian ,  ZHOU, Xianhua ,  WEI, Mengnan

    IPC分类号： H01L31/0296 ,  H01L31/0445

    摘要： Disclosed are a high-efficiency cadmium telluride thin-film solar cell and a preparation method therefor. The solar cell comprises a substrate layer, a window layer, a light-absorbing layer and a back electrode layer, which are sequentially arranged from bottom to top, wherein the window layer is made of magnesium-doped zinc oxide, the light-absorbing layer is an arsenic-doped tellurium-selenium-cadmium thin-film layer, and the back electrode layer is made of a composite metal material of molybdenum, aluminum and chromium. According to the present invention, the tellurium-selenium-cadmium thin-film layer is doped with a proper amount of As instead of Cu in an electric injection regeneration manner, so that the high p-type doping density is realized, Voc > 1V, a conversion efficiency > 23%, the conversion efficiency is high. The whole preparation process is simple to operate and easy to control.

    CADMIUM TELLURIDE SOLAR CELL AND PREPARATION METHOD THEREOF
    8.
    发明公开
    CADMIUM TELLURIDE SOLAR CELL AND PREPARATION METHOD THEREOF 审中-公开

    公开(公告)号：EP4030491A1

    公开(公告)日：2022-07-20

    申请号：EP20863852.8

    申请日：2020-09-14

    申请人： China Triumph International Engineering Co., Ltd.

    发明人： PENG, Shou ,  CHEN, Ying ,  YIN, Xinjian ,  ZHOU, Xianhua

    IPC分类号： H01L31/0296

    摘要： The present disclosure provides a cadmium telluride solar cell and a preparation method thereof. The method includes: providing a substrate, and forming a window layer on a first surface of the substrate, wherein the window layer is made of magnesium-doped zinc oxide; forming a light absorbing layer on a surface of the window layer, wherein the light absorbing layer includes a composite layer of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride; and forming a back electrode layer on a surface of the light absorbing layer. The use of the composite structure of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride allows the solar cell to absorb long-wavelength and short-wavelength light to the maximum, increases the short-circuit current density of the cell, and improves the efficiency of the cell. In addition, the window layer including magnesium-doped zinc oxide of the solar cell serves as a buffer layer to reduce the recombination of charge carriers between interfaces. Finally, the composite layer of cadmium selenide, selenium-doped cadmium telluride, and cadmium telluride that has a selenium-doped gradient can effectively prevent the diffusion of copper ions to the window layer of magnesium-doped zinc oxide, and reduce the formation of deep-level defects, thereby improving the initial performance and long-term stability of the solar cell.

    METHOD FOR MODIFYING CDTE LAYER OF CDTE THIN-LAYER SOLAR CELL
    10.
    发明公开
    METHOD FOR MODIFYING CDTE LAYER OF CDTE THIN-LAYER SOLAR CELL 审中-公开
    VERFAHREN ZUR MODIFIZIERUNG DER CDTE-SCHICHT EINER CDTE-DÜNNSCHICHT-SOLARZELLE

    公开(公告)号：EP3051596A1

    公开(公告)日：2016-08-03

    申请号：EP14847054.5

    申请日：2014-09-23

    申请人： China Triumph International Engineering Co., Ltd. ,  CTF Solar GmbH

    发明人： DROST, Christian ,  SPAETH, Bettina ,  PENG, Shou

    IPC分类号： H01L31/18

    摘要： The subject matter of the present invention is a method for treating the CdTe layer of semifinished thin-film solar products in a superstrate configuration, having a CdTe layer as the uppermost layer. According to the state of the art, these surfaces are subjected to an NP etching and are then coated. However, the tellurium oxides formed during the NP etching have proven to be a disadvantage for the subsequent coating steps. It is therefore proposed that the tellurium oxides that are present should be reduced to tellurium using a reducing agent in a further treatment step.

    摘要翻译： 本发明的主题是以CdTe层作为最上层处理具有上层结构的半成品薄膜太阳能产品的CdTe层的方法。 根据现有技术，这些表面经过NP蚀刻，然后被涂覆。 然而，在NP蚀刻期间形成的氧化碲被证明是后续涂布步骤的缺点。 因此，建议在另外的处理步骤中使用还原剂将存在的氧化碲还原成碲。