Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Qcm and, when the peak strength in a wave number range of 760-780 cm -1 in a Raman spectrum is regarded as "A" and the peak strength in a wave number range of 790-800 cm -1 in the Raman spectrum is regarded as "B", then the peak ratio (A/B) is not more than 0.100.