公开(公告)号：EP4036286A1

公开(公告)日：2022-08-03

申请号：EP20870427.0

申请日：2020-09-25

申请人： Tokai Carbon Co., Ltd.

发明人： USHIJIMA, Yuji ,  SUGIHARA, Takaomi ,  OKUYAMA, Seiichi

IPC分类号： C30B29/36 ,  C01B32/977 ,  C23C16/42 ,  C30B28/14

摘要： Provided is a polycrystalline SiC molded body wherein the resistivity is not more than 0.050 Qcm and, when the peak strength in a wave number range of 760-780 cm -1 in a Raman spectrum is regarded as "A" and the peak strength in a wave number range of 790-800 cm -1 in the Raman spectrum is regarded as "B", then the peak ratio (A/B) is not more than 0.100.

公开(公告)号：EP4343021A1

公开(公告)日：2024-03-27

申请号：EP23821858.0

申请日：2023-05-15

申请人： Tokai Carbon Co., Ltd.

发明人： SUGIHARA, Takaomi ,  USHIJIMA, Yuji

IPC分类号： C23C16/42 ,  C01B32/977

摘要： The present invention provides a polycrystalline SiC formed body having a low resistivity and a small variation in resistivity in a thickness direction thereof, and a method for producing the same. In the polycrystalline SiC formed body, a resistivity is 0.050 Ωcm or less, and an average value of peak intensity ratios (A/B) is 0.040 or less, and a difference between an average of peak intensity ratios on a growth surface side and an average of peak intensity ratios on a substrate surface side is 0.040 or less, wherein "A" represents a peak intensity within a range of wavenumber of 950 to 970 cm -1 of a Raman spectrum and "B" represents a peak intensity within a range of wavenumber of 780 to 800 cm -1 in a Raman spectrum.

公开(公告)号：EP4299787A1

公开(公告)日：2024-01-03

申请号：EP23766450.3

申请日：2023-02-15

申请人： Tokai Carbon Co., Ltd.

发明人： IIDA, Takuji ,  JINDO, Hiroyuki ,  OISHI, Shohei ,  TAKAHASHI, Ikuya ,  USHIJIMA, Yuji ,  YASHIKIDA, Reiko

IPC分类号： C23C16/32

摘要： An object of the present invention is to provide a polycrystalline SiC molded body having a small volume resistivity while having a small crystal grain size, and a method for producing the same. The present invention provides a polycrystalline SiC molded body having an average crystal grain size of 5 µm or less, a nitrogen concentration of 2.7×10 19 to 5.4×10 20 (atoms/cm 3 ), and a product of carrier density × Hall mobility of 4.0×10 20 to 6.0×10 21 (atoms/cmVsec).