A glass comprising at least one oxide of Si and a di- or higher-valent metal element, the glass containing no bubbles with diameters of more than 0.1 mm, wherein an occupied area fraction of bubbles with diameters of 0.1 mm or less is 0.05% or less. A semiconductor production apparatus and a liquid crystal production apparatus comprising a glass member comprising this glass. A method for producing a glass, comprising the steps of (1) placing raw material powders for at least one oxide of Si and a di- or higher-valent metal element in a container, mixing the raw material powders together and then melting the mixture by heating under reduced pressure to obtain a melt; (2-1) pressurizing the melt in a He gas atmosphere, or (2-2) heating the melt in an inert gas atmosphere other than a He gas atmosphere and then pressurizing the melt in the inert gas atmosphere; and (3) cooling the melt.