公开(公告)号：EP2070883B2

公开(公告)日：2017-04-19

申请号：EP07807048.9

申请日：2007-09-11

申请人： Tosoh Corporation ,  Tosoh Sgm Corporation

发明人： ARAI, Kazuyoshi ,  TAKAHATA, Tsutomu ,  HASIMOTO, Shinkichi ,  UCHIDA, Masato ,  YAMADA, Nobusuke ,  HARADA, Yoshinori ,  HORIKOSHI, Hideharu

IPC分类号： C03B20/00 ,  C03C3/06 ,  C03C4/00 ,  C03B19/06 ,  C03C4/10

CPC分类号： C03C4/0085 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04 ,  C03C3/06 ,  C03C4/10 ,  C03C2201/23 ,  C03C2201/50 ,  C03C2201/54 ,  Y02P40/57

公开(公告)号：EP2754638A1

公开(公告)日：2014-07-16

申请号：EP12830501.8

申请日：2012-09-03

申请人： Tosoh Corporation ,  Sagami Chemical Research Institute

发明人： KINOSHITA, Tomoyuki ,  IWANAGA, Kohei ,  ASANO, Sachio ,  KAWABATA, Takahiro ,  OSHIMA, Noriaki ,  HIRAI, Satori ,  HARADA, Yoshinori ,  ARAI, Kazuyoshi ,  TADA, Ken-ichi

IPC分类号： C01B13/32 ,  C01B33/113 ,  C01G23/04 ,  C07F7/10 ,  C07F7/18 ,  C07F7/28 ,  H01L21/316

CPC分类号： C09D1/00 ,  C01B33/113 ,  C07F7/006 ,  C07F7/025 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02216 ,  H01L21/02282

摘要： An object of the present invention is to provide a method for producing a Group IV metal oxide film useful as a semiconductor element or an optical element at a low temperature. The present invention relates to a method for producing a Group IV metal oxide film, comprising coating a surface of a substrate with a film-forming material dissolved in an organic solvent, and subjecting the substrate to a heat treatment, an ultraviolet irradiation treatment, or both of these treatments, wherein a film-forming material obtained by reacting a vinylenediamide complex having a specific structure with an oxidizing agent such as oxygen gas, air, ozone, water and hydrogen peroxide is used as the film-forming material.

摘要翻译： 本发明的目的是提供一种低温下用作半导体元件或光学元件的IV族金属氧化物膜的制造方法。 本发明涉及一种IV族金属氧化物膜的制造方法，其特征在于，包括使用溶解在有机溶剂中的成膜材料涂布基板的表面，对所述基板进行热处理，紫外线照射处理或 使用这些处理，其中通过使具有特定结构的亚乙烯基二胺配合物与氧气，氧气，空气，臭氧，水和过氧化氢等氧化剂反应获得的成膜材料用作成膜材料。

公开(公告)号：EP4082976A1

公开(公告)日：2022-11-02

申请号：EP22168468.1

申请日：2022-04-14

申请人： Tosoh Corporation

发明人： ITO, Masahiro ,  ARAI, Kazuyoshi

IPC分类号： C03C3/062 ,  H01L21/00 ,  C03B20/00 ,  C03C3/06 ,  C03B11/00

摘要： A glass comprising at least one oxide of Si and a di- or higher-valent metal element, the glass containing no bubbles with diameters of more than 0.1 mm, wherein an occupied area fraction of bubbles with diameters of 0.1 mm or less is 0.05% or less. A semiconductor production apparatus and a liquid crystal production apparatus comprising a glass member comprising this glass. A method for producing a glass, comprising the steps of (1) placing raw material powders for at least one oxide of Si and a di- or higher-valent metal element in a container, mixing the raw material powders together and then melting the mixture by heating under reduced pressure to obtain a melt; (2-1) pressurizing the melt in a He gas atmosphere, or (2-2) heating the melt in an inert gas atmosphere other than a He gas atmosphere and then pressurizing the melt in the inert gas atmosphere; and (3) cooling the melt.

公开(公告)号：EP2070883B1

公开(公告)日：2013-11-13

申请号：EP07807048.9

申请日：2007-09-11

申请人： Tosoh Corporation ,  Tosoh Sgm Corporation

发明人： ARAI, Kazuyoshi ,  TAKAHATA, Tsutomu ,  HASIMOTO, Shinkichi ,  UCHIDA, Masato ,  YAMADA, Nobusuke ,  HARADA, Yoshinori ,  HORIKOSHI, Hideharu

IPC分类号： C03B20/00 ,  C03C3/06 ,  C03C4/00 ,  C03B19/06 ,  C03C4/10

CPC分类号： C03C4/0085 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04 ,  C03C3/06 ,  C03C4/10 ,  C03C2201/23 ,  C03C2201/50 ,  C03C2201/54 ,  Y02P40/57

公开(公告)号：EP2070883A1

公开(公告)日：2009-06-17

申请号：EP07807048.9

申请日：2007-09-11

申请人： Tosoh Corporation ,  Tosoh Sgm Corporation

发明人： ARAI, Kazuyoshi ,  TAKAHATA, Tsutomu ,  HASIMOTO, Shinkichi ,  UCHIDA, Masato ,  YAMADA, Nobusuke ,  HARADA, Yoshinori ,  HORIKOSHI, Hideharu

IPC分类号： C03B20/00

CPC分类号： C03C4/0085 ,  C03B19/066 ,  C03B20/00 ,  C03B2201/03 ,  C03B2201/04 ,  C03C3/06 ,  C03C4/10 ,  C03C2201/23 ,  C03C2201/50 ,  C03C2201/54 ,  Y02P40/57

摘要： Fused silica glass having an internal transmittance of UV with 245 nm wavelength, being at least 95% at 10 mm thickness, a OH content of not larger than 5 ppm, and a content of Li, Na, K, Mg, Ca and Cu each being smaller than 0.1 ppm. Preferably the glass has a viscosity coefficient at 1215°C of at least 10 11.5 Pa·s; and a Cu ion diffusion coefficient of not larger than 1 × 10 -10 cm 2 /sec in a depth range of greater than 20 µm up to 100 µm, from the surface, when leaving to stand at 1050°C in air for 24 hours. The glass is made by crystobalitizing powdery silica raw material; then, fusing the crystobalitized silica material in a non-reducing atmosphere. The glass exhibits a high transmittance of ultraviolet, visible and infrared rays, has high purity and heat resistance, and exhibits a reduced diffusion rate of metal impurities, therefore, it is suitable for various optical goods, semiconductor-production apparatus members, and liquid crystal display production apparatus members.

公开(公告)号：EP1589128A1

公开(公告)日：2005-10-26

申请号：EP04705157.8

申请日：2004-01-26

申请人： TOSOH CORPORATION

发明人： ABE, Masanori ,  TAKAHASHI, Koyata ,  ARAI, Kazuyoshi ,  TAKAHATA, Tsutomu ,  HASHIMOTO, Shinkichi ,  KOHGO, Masanori

IPC分类号： C23C4/10

CPC分类号： C03C17/04 ,  C03C3/062 ,  C03C3/083 ,  C03C3/085 ,  C03C3/095 ,  C03C8/02 ,  C03C15/00 ,  C03C17/002 ,  C03C17/007 ,  C03C17/3417 ,  C03C19/00 ,  C03C2217/78 ,  C23C4/10 ,  C23C4/11 ,  C23D5/04 ,  Y02T50/67

摘要： Members to be used in CVD devices, plasma treatment devices, etc. are exhausted by reaction with a corrosive gas or etching with plasma, and therefore, there were encountered problems such as staining of products due to the generation of particles and a reduction of the yield productivity. Also, glasses resistant to corrosive gases or plasma are weak in the heat resistance, and therefore, applications to be employed were limited.
Members containing a heat-resisting base material having coated thereon a corrosion resistant glass containing at least one element selected from the group consisting of elements of the group 2a, group 3a and group 4a, especially an aluminosilicate or zirconia silicate based glass sprayed coating have high corrosion resistance to corrosive gases and plasma and high heat resistance and are less in the generation of particles.

摘要翻译： 用于CVD装置，等离子体处理装置等的构件通过与腐蚀性气体的反应或用等离子体蚀刻而耗尽，因此存在由于产生颗粒而导致的产品染色和减少的问题 产量生产力。 此外，耐腐蚀性气体或等离子体的玻璃的耐热性较差，因此所使用的应用受到限制。 包含耐热基材的构件，其上涂覆有耐腐蚀玻璃，其含有至少一种选自组2a，组3a和组4a的元素的元素，特别是铝硅酸盐或氧化锆硅酸盐基玻璃 喷涂涂层对腐蚀性气体和等离子体具有高耐腐蚀性，耐热性高，而且颗粒的产生少。