- 专利标题： HEMT DEVICE AND MANUFACTURING PROCESS THEREOF
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申请号： EP23159048.0申请日： 2023-02-28
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公开(公告)号： EP4239686A1公开(公告)日： 2023-09-06
- 发明人: IUCOLANO, Ferdinando , CHINI, Alessandro
- 申请人： STMicroelectronics S.r.l.
- 申请人地址： IT 20864 Agrate Brianza (MB) Via C. Olivetti, 2
- 代理机构： Studio Torta S.p.A.
- 优先权： IT202200004037 20220303
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/338 ; H01L21/336 ; H01L29/423 ; H01L29/417 ; H01L29/20
摘要：
The HEMT device (50) is formed by a heterostructure (62), by an insulation layer (68) that extends on the heterostructure and has a thickness along a first direction (Z), and by a gate region (74). The gate region has a first portion (74A) that extends through the insulation layer, throughout the thickness of the insulation layer, and has a second portion (74B) that extends in the heterostructure. The first portion of the gate region has a first width (Lw) along a second direction (X) transverse to the first direction. The second portion of the gate region has a second width (Lb), along the second direction, that is different from the first width.
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