The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga 2 O 3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga 2 O 3 , with a cleavage plane parallel to the surface, at a temperature below 500°C, making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1×10 12 -1×10 14 ions/cm 2 .s and a fluence in the range of 1×10 13 -1×10 16 ions/cm 2 , forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500°C.