专利检索 ap:("Instituto Superior Técnico") AND inv:"ANTÓNIO BAPTISTA PERES, Marco" 第 1 页

1.

发明公开
PROCESS FOR PRODUCING ROLLS AND MEMBRANES OF SUBMICROMETRIC THICKNESS OF GA2O3 BY ION IMPLANTATION 审中-公开

公开(公告)号：EP4246558A1

公开(公告)日：2023-09-20

申请号：EP22716119.7

申请日：2022-02-14

申请人： Instituto Superior Técnico

发明人： LORENZ, Katharina , ANTÓNIO BAPTISTA PERES, Marco , JORGE DA COSTA ALVES, Eduardo , MANUEL VARELAS DA ROCHA, Jorge

IPC分类号： H01L21/425 , H01L21/34 , C30B33/06

摘要： The present invention relates to a process for the production of membranes of submicrometric thickness and rolls of Ga 2 O 3 comprising the steps of: a) implanting ions in a monocrystal semiconductor of Ga 2 O 3 , with a cleavage plane parallel to the surface, at a temperature below 500°C, making an ion beam to strike, along a non-parallel direction to the referred cleavage plane, with an energy in the range of 10-4000 keV, a flux in the range of 1×10 12 -1×10 14 ions/cm 2 .s and a fluence in the range of 1×10 13 -1×10 16 ions/cm 2 , forming at least one roll; b) subjecting the at least one roll formed in step a) to a thermal treatment at a temperature equal to or greater than 500°C.