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    THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY PANEL
    3.
    发明公开
    THIN-FILM TRANSISTOR AND PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY PANEL 审中-公开
    德黑兰，德黑兰，德黑兰，阿拉伯联合酋长国

    公开(公告)号：EP3121840A1

    公开(公告)日：2017-01-25

    申请号：EP15882903.6

    申请日：2015-10-09

    申请人： BOE Technology Group Co., Ltd. ,  South China University of Technology

    发明人： YUAN, Guangcai ,  YAN, Liangchen ,  XU, Xiaoguang ,  WANG, Lei ,  PENG, Junbiao ,  LAN, Linfeng

    IPC分类号： H01L21/34 ,  H01L29/786

    摘要： This invention discloses a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.

    摘要翻译： 本发明公开了一种薄膜晶体管及其制备方法，阵列基板和显示面板，以解决当通过背沟道产生金属氧化物薄膜晶体管时有源层易于被腐蚀的问题 蚀刻工艺。 该制备方法包括：在基底基板上形成栅电极金属薄膜，并通过图案化工艺使栅电极金属薄膜形成包括栅电极的栅电极金属层; 在栅电极金属层上形成栅电极绝缘层; 在栅电极绝缘层上形成有源层; 在活性层上制备金属纳米颗粒层，所述金属纳米颗粒层用作蚀刻保护层; 在其上完成上述工艺的基底基板上形成源极和漏极金属薄膜，并且允许源极和漏极金属薄膜通过一个源极和漏极电极金属薄膜形成源极和漏极电极， 其中所述源电极和所述漏电极覆盖所述金属纳米颗粒层的一部分; 在含氧气氛中去除或氧化未被源电极和漏电极覆盖的金属纳米颗粒层的部分; 以及在所述源极和漏极电极金属层上形成钝化层。

    High power, high frequency metal-semiconductor field-effect transistor formed in silicon carbide
    7.
    发明公开
    High power, high frequency metal-semiconductor field-effect transistor formed in silicon carbide 失效
    金属 - 半导体场效应晶体管的高功率，高频率，由碳化硅制成的。

    公开(公告)号：EP0518683A1

    公开(公告)日：1992-12-16

    申请号：EP92305417.5

    申请日：1992-06-12

    申请人： CREE RESEARCH, INC.

    发明人： Palmour, John W.

    IPC分类号： H01L29/24 ,  H01L21/34

    CPC分类号： H01L29/1608 ,  H01L29/812

    摘要： A high power, high frequency, metal-semiconductor field-effect transistor comprises a bulk single crystal silicon carbide substrate (10), an optional first epitaxial layer (12) of p-type conductivity silicon carbide formed upon the substrate, and a second epitaxial layer (14) of n-type conductivity silicon carbide formed upon the first epitaxial layer. The second epitaxial layer (14) has two separate well regions (18, 16) therein that are respectively defined by higher carrier concentrations of n-type dopant ions than are present in the remainder of the second epitaxial layer. Ohmic contacts (20, 22) are positioned upon the wells for respectively defining one of the well regions (18) as the source and the other (16) as the drain. A Schottky metal contact (24) is positioned upon a portion of the second epitaxial layer (14) that is between the ohmic contacts (20, 22) and thereby between the source and drain for forming an active channel in the second epitaxial layer when a bias is applied to the Schottky contact (24).

    摘要翻译： 一种高功率，高频率，金属半导体场效应晶体管包括在在所述基板形成的p型导电性的碳化硅的可选的第一外延层（12）的大块单晶碳化硅衬底（10），以及第二外延 n型导电性的碳化硅的层（14）在所述第一外延层形成。 第二外延层（14）在其中具有没有分别由n型掺杂剂离子的更高载流子浓度限定的两个独立的阱区（18，16）比存在于所述第二外延层的剩余部分。 欧姆接触（20，22）在所述孔中，用于分别限定所述阱区（18）作为源，而另一个（16），其漏极中的一个定位。 肖特基金属接触（24）在所述第二外延层（14）那样的一部分定位是欧姆接触（20，22），并由此在源极和漏极之间之间，用于在所述第二外延层上形成有源沟道当 偏压被施加到所述肖特基接触（24）。

    Photovoltaic cell
    8.
    发明公开
    Photovoltaic cell 失效
    光伏电池

    公开(公告)号：EP0050925A3

    公开(公告)日：1983-01-26

    申请号：EP81304611

    申请日：1981-10-05

    申请人： PHOTON POWER INC.

    发明人： Singh, Vijay Pal

    IPC分类号： H01L31/18 ,  H01L31/06 ,  H01L21/34

    CPC分类号： H01L31/03365 ,  H01L31/072 ,  H01L31/1828 ,  Y02E10/543

    摘要： A photovoltaic cell is formed by combining a spray process, forming a crystalline layer containing cadmium and sulfur, and an evaporation process, depositing copper chloride for converting to Cu x S. The crystals containing cadmium and sulfur are heated in an atmosphere of cadmium and chlorides to obtain crystals having at least one dimension greater than 0.5 micron and a planar layer of Cu x S is formed on the large crystals. A layer of Cu x S having a thickness of 0.5-1.0 micron is obtained. Electrodes are formed from evaporated gold or chromium or a metallic paste including silver or copper. Zn x Cd 1-x S may be substituted for CdS through at least part of the crystalline layer for improved Voc.

    摘要翻译： 通过组合喷射法，形成含有镉和硫的结晶层和蒸发法形成光伏电池，将氯化铜沉积以转化为CuxS。 含有镉和硫的晶体在镉和氯化物的气氛中加热，得到至少一个尺寸大于0.5微米的晶体，并在大晶体上形成一层CuxS平面层。 得到厚度为0.5-1.0微米的CuxS层。 电极由蒸发的金或铬或包含银或铜的金属膏形成。 Zn x C d 1-x S可以通过至少部分结晶层代替CdS以改善Voc。