Invention Publication
- Patent Title: METHOD FOR EVALUATING WORK-MODIFIED LAYER, AND METHOD OF MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL SUBSTRATE
-
Application No.: EP22742516.2Application Date: 2022-01-14
-
Publication No.: EP4270450A1Publication Date: 2023-11-01
- Inventor: KANEKO, Tadaaki , Nakura, Yoshinobu , Asakawa, Kazunobu , KOJIMA, Kiyoshi
- Applicant: Kwansei Gakuin Educational Foundation , YGK Corporation , Toyota Tsusho Corporation
- Applicant Address: JP Nishinomiya-shi, Hyogo 662-8501 1-155, Uegahara-ichiban-cho; JP Alps-shi, Yamanashi 400-0311 595-2, Kuruwada, Minami; JP Nagoya-shi Aichi 450-8575 9-8, Meieki 4-chome Nakamura-ku
- Agency: dompatent von Kreisler Selting Werner - Partnerschaft von Patent- und Rechtsanwälten mbB
- Priority: JP2021006736 20210119
- International Announcement: WO2022158394 20220728
- Main IPC: H01L21/304
- IPC: H01L21/304 ; H01L21/66
Abstract:
An object of the present invention is to provide a novel technique capable of evaluating a subsurface damaged layer without destroying a semiconductor single crystal. As means for solving this object, the present invention causing a laser light to be incident from a surface of a semiconductor single crystal substrate to evaluate the subsurface damaged layer of the semiconductor single crystal substrate based on an intensity of a scattered light which is scattered inside the semiconductor single crystal substrate.
Information query
IPC分类:
