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公开(公告)号：EP4403677A3
公开(公告)日：2024-08-21
申请号：EP24162314.9
申请日：2020-08-05
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
CPC classification number: C30B29/36 , H01L21/02529 , H01L21/02658 , H01L21/02378 , H01L21/02631 , H01L21/02019 , C30B33/02 , C30B33/12 , C30B23/025 , C30B23/063 , C30B25/186
Abstract: An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.
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公开(公告)号：EP4276884A1
公开(公告)日：2023-11-15
申请号：EP22904341.9
申请日：2022-12-09
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi , ASAKAWA, Kazunobu
IPC: H01L21/304 , H01L21/66
Abstract: An object of the present invention is to provide a novel technology capable of evaluating a subsurface damaged layer without destroying a semiconductor substrate. As means for solving this object, the present invention includes a measurement step of causing laser light having penetration characteristics to be incident from a surface of a semiconductor substrate having a subsurface damaged layer under the surface and measuring an intensity of scattered light scattered under the surface, and an evaluation step of evaluating the subsurface damaged layer on the basis of the intensity of the scattered light obtained in the measurement step.
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公开(公告)号：EP4239111A1
公开(公告)日：2023-09-06
申请号：EP21886282.9
申请日：2021-10-27
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi
Abstract: An object of the present invention is to provide a novel evaluation method suitable for evaluating a SiC substrate having a large diameter.
The present invention is a method for evaluating a silicon carbide substrate, the method comprising an image acquisition step of acquiring an image by making an electron beam incident at an incident angle inclined with respect to a normal line of a {0001} plane of a silicon carbide substrate, wherein the incident angle is 10° or less.-
公开(公告)号：EP4137621A1
公开(公告)日：2023-02-22
申请号：EP21788223.2
申请日：2021-03-30
Inventor： KANEKO, Tadaaki , DOJIMA, Daichi
Abstract: The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor substrate, the mehod including: a processing step for removing a portion of a base substrate and forming a pattern that includes a minor angle; and a crystal growth step for forming a growth layer on the base substrate where the patter has been formed. In addition, the present invention pertains to a method for suppressing the introduction of displacement to a growth layer, the method including a processing step for removing a portion of the base substrate and forming a pattern that includes a minor angle prior to forming the growth layer on the base substrate.
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5.发明公开
公开(公告)号：EP3960912A1
公开(公告)日：2022-03-02
申请号：EP20793980.2
申请日：2020-04-24
Inventor： KANEKO, Tadaaki
Abstract: The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.
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Patent Agency Ranking
公开(公告)号：EP3375914B1
公开(公告)日：2020-06-24
申请号：EP16863829.4
申请日：2016-11-08
Applicant: Kwansei Gakuin Educational Foundation
Inventor： KANEKO, Tadaaki , KUTSUMA, Yasunori , ASHIDA, Koji
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7.发明公开CYCLIC PEPTIDE COMPOUND OR PHARMACOLOGICALLY ACCEPTABLE SALT THEREOF AND METHOD FOR PRODUCING SAME 审中-公开环肽化合物或其药学上可接受的盐，及其制造方法
公开(公告)号：EP2592088A4
公开(公告)日：2014-11-19
申请号：EP11803647
申请日：2011-07-06
Applicant: KWANSEI GAKUIN EDUCATIONAL FOUNDATION
Inventor： HIRAI YOHEI , OKUGAWA YOJI
Abstract: Provided are a cyclic peptide compound or a pharmacologically acceptable salt thereof capable of inhibiting parakeratosis of skin, and a method for producing the same. This method comprises subjecting a cyclic peptide compound of Formula (I): or a pharmacologically acceptable salt thereof, wherein Xaa 1 and Xaa 5 are each optionally substituted Ser, optionally substituted Thr, or optionally substituted Tyr; Xaa 2 is optionally substituted Ile, optionally substituted Val, or optionally substituted Leu; Xaa 3 and Xaa 4 are each optionally substituted Asn, optionally substituted Gln, optionally substituted Asp, or optionally substituted Glu; and R 1 is a group of Formula (II): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ-CO-(CH 2 ) n -NH-€ƒ€ƒ€ƒ€ƒ€ƒ(II) or Formula (III): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ-NR-(CH 2 ) n -CO-€ƒ€ƒ€ƒ€ƒ€ƒ(III) wherein n is the same as defined above, and in Formula (I), the linkage between Cys and Cys is a peptide bond or a disulfide bond, and the other linkages are peptide bonds, to cyclization with a compound of Formula (IV): €ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒ€ƒCys-R 1 -Xaa 1 -Xaa 2 -Xaa 3 -Xaa 4 -Xaa 5 -Cys€ƒ€ƒ€ƒ€ƒ€ƒ(IV) wherein, Xaa 1 , Xaa 2 , Xaa 3 , Xaa 4 , Xaa 5 , and R 1 are the same as defined above.
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8.发明公开
公开(公告)号：EP4415025A1
公开(公告)日：2024-08-14
申请号：EP22878362.7
申请日：2022-09-26
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC: H01L21/205 , C30B29/36
CPC classification number: C30B29/36 , H01L21/2015
Abstract: An object of the present invention is to provide a novel technique for improving an activation rate of dopant of an epitaxial layer. Another object of the present invention is to provide a novel technique for suppressing variation in activation rate of dopant in the epitaxial layer.
The present invention is a method for improving the activation rate of dopant of an epitaxial layer 20, including a growth step S10 of growing the epitaxial layer 20 having the dopant on a bulk layer 10 under an equilibrium vapor pressure environment.-
公开(公告)号：EP4279642A1
公开(公告)日：2023-11-22
申请号：EP22739360.0
申请日：2022-01-07
Inventor： KANEKO, Tadaaki , KOJIMA, Kiyoshi
Abstract: The present invention addresses the problem of providing a novel technology for measuring an etching amount in heat treatment in which growth and etching proceed simultaneously. The present invention includes: a first substrate thickness measuring step S10 for measuring the thickness 10D of a to-be-heat-treated semiconductor substrate 10; a second substrate thickness measuring step S20 for measuring the thickness 20D of a heat-treated semiconductor substrate 20; a growth layer thickness measuring step S30 for measuring the thickness 21D of a growth layer 21 which has gone through crystal growth by heat treatment; and an etching amount calculating step S40 for calculating the etching amount ED on the basis of the thickness 10D of the to-be-heat-treated semiconductor substrate 10, the thickness 20D of the heat-treated semiconductor substrate 20, and the thickness 21D of the growth layer 21.
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10.发明公开
公开(公告)号：EP4270450A1
公开(公告)日：2023-11-01
申请号：EP22742516.2
申请日：2022-01-14
Inventor： KANEKO, Tadaaki , Nakura, Yoshinobu , Asakawa, Kazunobu , KOJIMA, Kiyoshi
IPC: H01L21/304 , H01L21/66
Abstract: An object of the present invention is to provide a novel technique capable of evaluating a subsurface damaged layer without destroying a semiconductor single crystal. As means for solving this object, the present invention causing a laser light to be incident from a surface of a semiconductor single crystal substrate to evaluate the subsurface damaged layer of the semiconductor single crystal substrate based on an intensity of a scattered light which is scattered inside the semiconductor single crystal substrate.
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