-
公开(公告)号：EP4276884A1
公开(公告)日：2023-11-15
申请号：EP22904341.9
申请日：2022-12-09
IPC分类号： H01L21/304 , H01L21/66
摘要： An object of the present invention is to provide a novel technology capable of evaluating a subsurface damaged layer without destroying a semiconductor substrate. As means for solving this object, the present invention includes a measurement step of causing laser light having penetration characteristics to be incident from a surface of a semiconductor substrate having a subsurface damaged layer under the surface and measuring an intensity of scattered light scattered under the surface, and an evaluation step of evaluating the subsurface damaged layer on the basis of the intensity of the scattered light obtained in the measurement step.
-
2.发明公开
公开(公告)号：EP4270450A1
公开(公告)日：2023-11-01
申请号：EP22742516.2
申请日：2022-01-14
IPC分类号： H01L21/304 , H01L21/66
摘要： An object of the present invention is to provide a novel technique capable of evaluating a subsurface damaged layer without destroying a semiconductor single crystal. As means for solving this object, the present invention causing a laser light to be incident from a surface of a semiconductor single crystal substrate to evaluate the subsurface damaged layer of the semiconductor single crystal substrate based on an intensity of a scattered light which is scattered inside the semiconductor single crystal substrate.
-
公开(公告)号：EP4403677A3
公开(公告)日：2024-08-21
申请号：EP24162314.9
申请日：2020-08-05
发明人： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC分类号： C30B29/36 , C30B23/06 , C30B33/12 , H01L21/203 , C30B23/02 , C30B25/18 , C30B33/02 , H01L21/02
CPC分类号： C30B29/36 , H01L21/02529 , H01L21/02658 , H01L21/02378 , H01L21/02631 , H01L21/02019 , C30B33/02 , C30B33/12 , C30B23/025 , C30B23/063 , C30B25/186
摘要： An object of the present invention is to provide a novel technology capable of achieving high-quality SiC seed crystal, SiC ingot, SiC wafer and SiC wafer with an epitaxial film. The present invention, which solves the above object, is a method for producing a SiC seed crystal for growth of a SiC ingot, the method including a heat treatment step of heat-treating a SiC single crystal in an atmosphere containing Si element and C element. As described above, by heat-treating the SiC single crystal in an atmosphere containing the Si element and the C element, it is possible to produce a high-quality SiC seed crystal in which strain and crystal defects are suppressed.
-
公开(公告)号：EP4239111A1
公开(公告)日：2023-09-06
申请号：EP21886282.9
申请日：2021-10-27
发明人： KANEKO, Tadaaki , DOJIMA, Daichi
摘要： An object of the present invention is to provide a novel evaluation method suitable for evaluating a SiC substrate having a large diameter.
The present invention is a method for evaluating a silicon carbide substrate, the method comprising an image acquisition step of acquiring an image by making an electron beam incident at an incident angle inclined with respect to a normal line of a {0001} plane of a silicon carbide substrate, wherein the incident angle is 10° or less.-
公开(公告)号：EP4137621A1
公开(公告)日：2023-02-22
申请号：EP21788223.2
申请日：2021-03-30
发明人： KANEKO, Tadaaki , DOJIMA, Daichi
摘要： The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor substrate, the mehod including: a processing step for removing a portion of a base substrate and forming a pattern that includes a minor angle; and a crystal growth step for forming a growth layer on the base substrate where the patter has been formed. In addition, the present invention pertains to a method for suppressing the introduction of displacement to a growth layer, the method including a processing step for removing a portion of the base substrate and forming a pattern that includes a minor angle prior to forming the growth layer on the base substrate.
-
6.发明公开
公开(公告)号：EP3960912A1
公开(公告)日：2022-03-02
申请号：EP20793980.2
申请日：2020-04-24
发明人： KANEKO, Tadaaki
摘要： The present invention addresses the problem of providing a novel method for manufacturing a SiC substrate, and a manufacturing device for said method. The present invention realizes: a method for manufacturing a SiC substrate, comprising heating two mutually opposing SiC single-crystal substrates and transporting a raw material from one SiC single-crystal substrate to the other SiC single-crystal substrate; and a manufacturing device for said method. Through the present invention, each of the mutually opposing SiC single-crystal substrate surfaces can be used as a raw material for crystal growth of the other SiC single-crystal substrate surface, and it is therefore possible to realize a highly economical method for manufacturing a SiC substrate.
-
7.发明公开
公开(公告)号：EP4415025A1
公开(公告)日：2024-08-14
申请号：EP22878362.7
申请日：2022-09-26
发明人： KANEKO, Tadaaki , KOJIMA, Kiyoshi
IPC分类号： H01L21/205 , C30B29/36
CPC分类号： C30B29/36 , H01L21/2015
摘要： An object of the present invention is to provide a novel technique for improving an activation rate of dopant of an epitaxial layer. Another object of the present invention is to provide a novel technique for suppressing variation in activation rate of dopant in the epitaxial layer.
The present invention is a method for improving the activation rate of dopant of an epitaxial layer 20, including a growth step S10 of growing the epitaxial layer 20 having the dopant on a bulk layer 10 under an equilibrium vapor pressure environment.-
公开(公告)号：EP4279642A1
公开(公告)日：2023-11-22
申请号：EP22739360.0
申请日：2022-01-07
发明人： KANEKO, Tadaaki , KOJIMA, Kiyoshi
摘要： The present invention addresses the problem of providing a novel technology for measuring an etching amount in heat treatment in which growth and etching proceed simultaneously. The present invention includes: a first substrate thickness measuring step S10 for measuring the thickness 10D of a to-be-heat-treated semiconductor substrate 10; a second substrate thickness measuring step S20 for measuring the thickness 20D of a heat-treated semiconductor substrate 20; a growth layer thickness measuring step S30 for measuring the thickness 21D of a growth layer 21 which has gone through crystal growth by heat treatment; and an etching amount calculating step S40 for calculating the etching amount ED on the basis of the thickness 10D of the to-be-heat-treated semiconductor substrate 10, the thickness 20D of the heat-treated semiconductor substrate 20, and the thickness 21D of the growth layer 21.
-
9.发明公开
公开(公告)号：EP3960913A1
公开(公告)日：2022-03-02
申请号：EP20796041.0
申请日：2020-04-24
发明人： KANEKO, Tadaaki
IPC分类号： C30B23/06 , H01L21/20 , H01L21/203 , C30B29/36
摘要： The purpose of the present invention is to provide a novel method and apparatus of manufacturing a semiconductor substrate. Achieved are a method of manufacturing a semiconductor substrate and a manufacturing apparatus therefor, the method comprising: an installation step for installing a plurality of objects to be processed having semiconductor substrates in a stack; and a heating step for heating each of the plurality of objects to be processed such that a temperature gradient is formed in the thickness direction of the semiconductor substrate.
-
公开(公告)号：EP3936643A1
公开(公告)日：2022-01-12
申请号：EP20765860.0
申请日：2020-03-03
摘要： The present invention addresses the problem of providing a method and apparatus for producing an SiC substrate, by which an SiC substrate having a thin base substrate layer is able to be produced, while suppressing deformation or breakage. The present invention is characterized by being provided with: a main container 20 which is capable of containing an SiC base substrate 10, and which produces a vapor pressure of a vapor-phase species containing elemental Si and a vapor-phase species containing elemental C within the internal space by means of heating; and a heating furnace 30 which contains the main container 20 and heats the main container 20 so as to form a temperature gradient, while producing a vapor pressure of a vapor-phase species containing elemental Si within the internal space. The present invention is also characterized in that the main container 20 has a growth space S1 in which a growth layer 11 is formed on one surface of the SiC base substrate 10, and an etching space S2 in which the other surface of the SiC base substrate 10 is etched.
-
-
-
-
-
-
-
-
-
搜索结果
52 条记录 (耗时 0.018 秒)
