- 专利标题： USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS
-
申请号： EP23213346.2申请日： 2017-10-26
-
公开(公告)号： EP4307343A3公开(公告)日： 2024-03-27
- 发明人: VRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , ACHTYL, Jennifer Lynn Anne , ENTLEY, William Robert , SINATORE, Dino , THEODOROU, Kathleen Esther , ADAMCZYK, Andrew, J.
- 申请人： Versum Materials US, LLC
- 申请人地址： US Tempe, AZ 85284 8555 S. River Parkway
- 代理机构： Beck Greener LLP
- 优先权： US201715789790 20171020
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/40 ; C23C16/505 ; C23C16/56
摘要：
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
公开/授权文献
- EP4307343A2 USE OF SILYL BRIDGED ALKYL COMPOUNDS FOR DENSE OSG FILMS 公开/授权日：2024-01-17
信息查询
IPC分类:
