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公开(公告)号：EP4320286A1
公开(公告)日：2024-02-14
申请号：EP22805264.3
申请日：2022-05-16
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公开(公告)号：EP4241299A1
公开(公告)日：2023-09-13
申请号：EP21901340.6
申请日：2021-11-30
发明人： PEARLSTEIN, Ronald M. , LEI, Xinjian , RIDGEWAY, Robert Gordon , WU, Aiping , LEE, Yi-Chia , AGARWAL, Sumit , RAMESH, Rohit Narayanan Kavassery , XU, Wanxing , GASVODA, Ryan James
IPC分类号： H01L21/32 , H01L21/02 , C23C16/04 , C23C16/455 , C23C16/40
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公开(公告)号：EP4325548A2
公开(公告)日：2024-02-21
申请号：EP24150603.9
申请日：2019-08-09
发明人： XIAO, Manchao , VIRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , ENTLEY, William Robert , ACHTYL, Jennifer Lynn Anne , LEI, Xinjian , SPENCE, Daniel P.
IPC分类号： H01L21/02
摘要： A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.
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公开(公告)号：EP4307343A2
公开(公告)日：2024-01-17
申请号：EP23213346.2
申请日：2017-10-26
发明人： VRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , ACHTYL, Jennifer Lynn Anne , ENTLEY, William Robert , SINATORE, Dino , THEODOROU, Kathleen Esther , ADAMCZYK, Andrew, J.
IPC分类号： H01L21/02
摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.
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公开(公告)号：EP3872223A2
公开(公告)日：2021-09-01
申请号：EP21164681.5
申请日：2019-08-09
发明人： XIAO, Manchao , VIRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , ENTLEY, William Robert , ACHTYL, Jennifer Lynn Anne , LEI, Xinjian , SPENCE, Daniel P.
摘要： A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.
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公开(公告)号：EP4325548A3
公开(公告)日：2024-04-10
申请号：EP24150603.9
申请日：2019-08-09
发明人： XIAO, Manchao , VIRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , ENTLEY, William Robert , ACHTYL, Jennifer Lynn Anne , LEI, Xinjian , SPENCE, Daniel P.
摘要： A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.
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公开(公告)号：EP4240886A1
公开(公告)日：2023-09-13
申请号：EP21901345.5
申请日：2021-11-30
发明人： PEARLSTEIN, Ronald M. , LEI, Xinjian , RIDGEWAY, Robert Gordon , WU, Aiping , LEE, Yi-chia , AGARWAL, Sumit , RAMESH, Rohit Narayanan Kavassery , XU, Wanxing , GASVODA, Ryan James
IPC分类号： C23C16/455 , C23C16/04 , C23C16/02 , C23C16/40 , H01L21/02 , H01L21/285
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公开(公告)号：EP4018013A1
公开(公告)日：2022-06-29
申请号：EP20862226.6
申请日：2020-09-10
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公开(公告)号：EP2993687B1
公开(公告)日：2020-02-05
申请号：EP15181146.0
申请日：2015-08-14
发明人： LI, Jianheng , VRTIS, Raymond Nicholas , RIDGEWAY, Robert Gordon , LEI, Xinjian , O'NEILL, Mark Leonard , JIANG, Xuezhong
IPC分类号： H01L21/02 , H01L21/768 , C23C16/40 , C23C16/455 , H01L21/3105
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公开(公告)号：EP4211291A1
公开(公告)日：2023-07-19
申请号：EP21883818.3
申请日：2021-10-20
发明人： XIAO, Manchao , SPENCE, Daniel P. , LEI, Xinjian , ENTLEY, William Robert , VRTIS, Raymond Nicholas , ACHTYL, Jennifer Lynn Anne , RIDGEWAY, Robert Gordon
IPC分类号： C23C16/40 , C23C16/505 , H01L21/02 , B05D1/00
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