公开(公告)号：EP4018013A1

公开(公告)日：2022-06-29

申请号：EP20862226.6

申请日：2020-09-10

申请人： Versum Materials US, LLC

发明人： XIAO, Manchao ,  ENTLEY, William Robert ,  SPENCE, Daniel P. ,  VRTIS, Raymond Nicholas ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon ,  LEI, Xinjian

IPC分类号： C23C14/12 ,  C23C16/18 ,  H01L21/02

公开(公告)号：EP2993687B1

公开(公告)日：2020-02-05

申请号：EP15181146.0

申请日：2015-08-14

申请人： Versum Materials US, LLC

发明人： LI, Jianheng ,  VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  LEI, Xinjian ,  O'NEILL, Mark Leonard ,  JIANG, Xuezhong

IPC分类号： H01L21/02 ,  H01L21/768 ,  C23C16/40 ,  C23C16/455 ,  H01L21/3105

公开(公告)号：EP4307343A2

公开(公告)日：2024-01-17

申请号：EP23213346.2

申请日：2017-10-26

申请人： Versum Materials US, LLC

发明人： VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  ACHTYL, Jennifer Lynn Anne ,  ENTLEY, William Robert ,  SINATORE, Dino ,  THEODOROU, Kathleen Esther ,  ADAMCZYK, Andrew, J.

IPC分类号： H01L21/02

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.

公开(公告)号：EP3231892A1

公开(公告)日：2017-10-18

申请号：EP17167460.9

申请日：2004-03-02

申请人： Versum Materials US, LLC

发明人： LUKAS, Aaron Scott ,  O'NEILL, Mark Leonard ,  VINCENT, Jean Louise ,  VRTIS, Raymond Nicholas ,  BITNER, Mark Daniel ,  KARWACKI, Eugene Joseph Jr.

IPC分类号： C23C16/56 ,  C23C16/40 ,  H01L21/31

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is exposed to an ultraviolet light source wherein the film after exposure has an at least 10% or greater improvement in its mechanical properties (i.e., material hardness and elastic modulus) compared to the as-deposited film.

摘要翻译： 当用作集成电路中的层间电介质时，已经确定低介电材料和包含它们的膜以提高性能以及制造它们的方法。 在本发明的一个方面中，将有机硅酸盐玻璃膜暴露于紫外光源，其中暴露后的膜与其相比，其机械性质（即材料硬度和弹性模量）至少有10％或更大的提高 - 沉积的电影。

公开(公告)号：EP4211291A1

公开(公告)日：2023-07-19

申请号：EP21883818.3

申请日：2021-10-20

申请人： Versum Materials US, LLC

发明人： XIAO, Manchao ,  SPENCE, Daniel P. ,  LEI, Xinjian ,  ENTLEY, William Robert ,  VRTIS, Raymond Nicholas ,  ACHTYL, Jennifer Lynn Anne ,  RIDGEWAY, Robert Gordon

IPC分类号： C23C16/40 ,  C23C16/505 ,  H01L21/02 ,  B05D1/00

公开(公告)号：EP4168604A1

公开(公告)日：2023-04-26

申请号：EP21845706.7

申请日：2021-07-23

申请人： Versum Materials US, LLC

发明人： BROWN, Forrest Glenn ,  VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  XIAO, Manchao ,  RAJARAMAN, Suresh Kalpattu ,  SPENCE, Daniel P.

IPC分类号： C23C16/30 ,  C23C16/505 ,  C23C16/56 ,  H01L21/02 ,  C07F7/18

公开(公告)号：EP3977508A1

公开(公告)日：2022-04-06

申请号：EP20826685.8

申请日：2020-06-19

申请人： Versum Materials US, LLC

发明人： VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon

IPC分类号： H01L21/02 ,  C23C16/50 ,  C23C16/32 ,  C23C16/34 ,  C23C16/40

公开(公告)号：EP2958135B1

公开(公告)日：2018-03-28

申请号：EP15172307.9

申请日：2015-06-16

申请人： Versum Materials US, LLC

发明人： VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  LI, Jianheng ,  ENTLEY, William Robert ,  ACHTYL, Jennifer Lynn Anne ,  LEI, Xinjian

IPC分类号： H01L21/02 ,  C23C16/30 ,  C23C16/56 ,  C07F7/18

CPC分类号： H01L21/02274 ,  C23C16/30 ,  C23C16/56 ,  H01B3/18 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02348

摘要： A method and composition for producing a porous low k dielectric film via chemical vapor deposition is provided. In one aspect, the method comprises the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an alkyl-alkoxysilacyclic compound, and a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 2.7 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

公开(公告)号：EP4307343A3

公开(公告)日：2024-03-27

申请号：EP23213346.2

申请日：2017-10-26

申请人： Versum Materials US, LLC

发明人： VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  ACHTYL, Jennifer Lynn Anne ,  ENTLEY, William Robert ,  SINATORE, Dino ,  THEODOROU, Kathleen Esther ,  ADAMCZYK, Andrew, J.

IPC分类号： H01L21/02 ,  C23C16/40 ,  C23C16/505 ,  C23C16/56

摘要： Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same.

公开(公告)号：EP4047109A1

公开(公告)日：2022-08-24

申请号：EP22160332.7

申请日：2017-08-25

申请人： Versum Materials US, LLC

发明人： LI, Jianheng ,  VRTIS, Raymond Nicholas ,  RIDGEWAY, Robert Gordon ,  XIAO, Manchao ,  Lei, Xinjian

IPC分类号： C23C16/40 ,  C23C16/34 ,  C23C16/32 ,  C23C16/30 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02 ,  C01B33/12 ,  C07F7/18 ,  C09D1/00 ,  C09D7/61 ,  C23C16/04

摘要： A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about -20 °C to about 400 °C; introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.