发明公开
- 专利标题: SCALABLE MEMORY POOL
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申请号: EP23202709.4申请日: 2023-10-10
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公开(公告)号: EP4361830A1公开(公告)日: 2024-05-01
- 发明人: CHOI, Byung Hee , KADIYALA, Divya Kiran , CHOI, Changho
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- 代理机构: Kuhnen & Wacker Patent- und Rechtsanwaltsbüro PartG mbB
- 优先权: US 202263419643 P 2022.10.26
- 主分类号: G06F13/40
- IPC分类号: G06F13/40 ; G06F13/42
摘要:
A system including a scalable memory pool. In some embodiments, the system includes: a first memory node, including a first memory; a second memory node, including a second memory; and a memory node switching fabric connected to the first memory node and the second memory node, the memory node switching fabric being configured to provide access, via the first memory node: with a first latency, to the first memory, and with a second latency, greater than the first latency, to the second memory.
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